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The peculiarities of electric current are studied occurring in semiconductors with strongly nonuniform distribution of charge carriers. The formation of such nonuniformities and the regulation of carrier mobilities can be realized by means…
We show that topological superconductivity may emerge upon doping of transition metal dichalcogenide heterobilayers above an integer-filling magnetic state of the topmost valence moir\'e band. The effective attraction between charge…
We investigate the nonlinear regime of charge and energy transport through Coulomb-blockaded quantum dots. We discuss crossed effects that arise when electrons move in response to thermal gradients (Seebeck effect) or energy flows in…
Topological insulators have attracted abundant attention for a variety of reasons -- notably, the possibility for lossless energy transport through edge states `protected' against disorder. Topological effects like the Quantum Hall state…
Moire superlattices of transition metal dichalcogenide (TMD) bilayers have been shown to host correlated electronic states, which arises from the interplay of emergent moire potential and long-range Coulomb interactions. Here we…
We present a theoretical investigation of the voltage-driven metal insulator transition based on solving coupled Boltzmann and Hartree-Fock equations to determine the insulating gap and the electron distribution in a model system -- a one…
Semiconductor qubit devices suffer from the drift of important device parameters as they are operated. The most important example is a shift in qubit operating frequencies. This effect appears to be directly related to the heating of the…
We identify form-stable coupled excitations of light and matter (``dark-state polaritons'') associated with the propagation of quantum fields in Electromagnetically Induced Transparency. The properties of the dark-state polaritons such as…
We study the influence of the pulse energy and fluence on the thermalization of photo-doped Mott insulators. If the Mott gap is smaller than the width of the Hubbard bands, the kinetic energy of individual carriers can be large enough to…
The electronic conduction of a novel, three-terminal molecular architecture, analogous to a heterojunction bipolar transistor is studied. In this architecture, two diode arms consisting of donor-acceptor molecular wires fuse through a ring,…
We explore the scattering of Dirac electrons in a double-gated topological insulator in the presence of magnetic proximity effects and warped surface states. It is found that a magnetic field can shift the Dirac cone in momentum space and…
Starting from the random phase approximation for the weakly coupled multiband tightly-bounded electron systems, we calculate the dielectric matrix in terms of intraband and interband transitions. The advantages of this representation with…
We demonstrate a tunneling and rectification behavior in bilayer graphene. A stepped dielectric top gate creates a spatially modulated electric field, which opens the band gap in the graphene and produces an insulating region at the p-n…
We investigate coherent electron-switching transport in a double quantum waveguide system in a perpendicular static or vanishing magnetic field. The finite symmetric double waveguide is connected to two semi-infinite leads from both ends.…
We propose a setup allowing to entangle two directly non-interacting radiation modes applying four sequential pulsed quantum resonant interactions with a noisy vibrational mode of a mechanical oscillator which plays the role of the…
We propose a theory of optically-induced currents in dielectrics and wide-gap semiconductors exposed to a non-resonant ultrashort laser pulse with a stabilized carrier-envelope phase. In order to describe strong-field electron dynamics,…
High harmonic generation (HHG) in solids results from an interplay between intraband acceleration and electron-hole recombination driven by a high-intensity laser pulse. Here, we theoretically reveal that the driving pulse duration can play…
We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP and Ge in THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of…
Topological phase transitions can be remarkably induced purely by manipulating gain and loss mechanisms, offering a novel approach to engineering topological properties. Recent theoretical studies have revealed gain-loss-induced topological…
A major challenge in understanding the cuprate superconductors is to clarify the nature of the fundamental electronic correlations that lead to the pseudogap phenomenon. Here we use ultrashort light pulses to prepare a non-thermal…