Related papers: Tailoring 4H-SiC Surface Electronic States by Atom…
In the field of high-energy particle detection, detectors operating in high-radiation environments primarily face high costs associated with power consumption and cooling systems. Therefore, the development of particle detectors capable of…
The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier…
Silicon Carbide (SiC) demonstrates significant potential for high-energy particle detection in complex radiation environments due to its exceptional radiation resistance, excellent environmental adaptability, and fast response time.…
Silicon vacancies ($V_\mathrm{Si}$) in 4H-SiC are promising candidates for quantum technologies due to their long spin coherence times and integrability into mature semiconductor platforms. However, conventional CMOS-compatible processing…
To cope with environments with high levels of radiation, non-silicon semiconductors such as silicon carbide detectors are being proposed for instrumentation. 4H-SiC diodes for radiation detection have been fabricated in the IMB-CNM Clean…
We are developing position sensitive silicon detectors (PSDs) which have an electrode at each of four corners so that incident position of a charged particle can be obtained with signal from the electrodes. It is expected that the position…
A silicon carbide PIN detector was fabricated and its radiation tolerance under Ta heavy ion irradiation of 2370 MeV was evaluated. Its electrical properties, charge collection performance and time resolution of $\beta$-particles…
Color centers in silicon carbide (SiC) have demonstrated significant promise for quantum information processing. However, the undesirable ionization process that occurs during optical manipulation frequently causes fluctuations in the…
Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature doping and device fabrication. Additionally, SiC hosts a multitude of optically active point defects (color centers) and is relevant for many…
Ultrathin microscale resistive thermometers are of key value to many applications. Here we have fabricated a laser machined 50 ${\mu}$m wide and 50 nm thick serpentine Pt thin film sensor capable of sensing temperatures up to 650 ${^\circ}$…
Optically-active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain and temperature. Current sensing techniques…
Silicon carbide (SiC) excels in its outstanding mechanical properties, which are widely studied in Microelectromechanical systems (MEMS). Recently, the mechanical tuning of color centers in 4H-SiC has been demonstrated, broadening its…
In ion cancer therapy, high-intensity ion beams are used to treat tumors by taking advantage of the Bragg-Peak. Typical ion therapy centers use particle rates up to $10^{10}$ ions/second for treatment. On the other hand, such intensities…
The hybrid architecture of the Timepix (TPX) family of detectors enables the use of different semiconductor sensors, most commonly silicon (Si), as well as high-density materials such as Cadmium Telluride (CdTe) or Gallium Arsenide (GaAs).…
Nontrivial band topologies in semimetals lead to robust surface states that can contribute dominantly to the total conduction. This may result in reduced resistivity with decreasing feature size contrary to conventional metals, which may…
The silicon suboxide SiOx (x<2.0) offers promising industrial application possibilities ranging from electrodes in lithium-ion batteries, which are used widely in electrical vehicles and portable devices to sensing applications. Therefore,…
To meet high radiation challenge for detectors in future high-energy physics, a novel 3D 4H-SiC detector was investigated. SiC detectors could potentially operate in radiation harsh and room temperature environment because of its high…
We calculate a low-frequency surface impedance of a dirty, s-wave superconductor with an imperfect surface incorporating either a thin layer with a reduced pairing constant or a thin, proximity-coupled normal layer. Such structures model…
This study evaluates the radiation tolerance of a 4H-SiC PIN detector under X-ray irradiation up to \SI{2}{MGy} (Si) at \SI{160}{keV}. The detector features a fully epitaxial vertical PIN structure with mesa terminations and field plates.…
The pseudogap phase above the critical temperature of high $T_{c}$ superconductors (HTSC) presents different energy scales and it is currently a matter of intense study. The complexity of the HTSC normal state requires very accurate…