Related papers: Tunneling valley Hall effect induced by coherent g…
We predict the coexistence of tunneling spin and valley Hall effects when electrons in graphene coherently transmit through a barrier with the broken inversion symmetry and proximity-induced spin-orbit coupling. Due to the rotation of the…
The electric Hall effect (EHE) is a newly identified Hall effect characterized by a perpendicular electric field inducing a transverse charge current in two-dimensional (2D) systems. Here, we propose a spin and valley version of EHE. We…
We introduce a new mechanism that produces a Hall-like response in time-reversal-invariant materials, driven entirely by geometric effects. Specifically, we demonstrate that a tilted potential interface causes electron wave packets to…
The valley Hall effect arises from valley contrasting Berry curvature and requires inversion symmetry breaking. Here, we propose a nonlinear mechanism to generate a valley Hall current in systems with both inversion and time-reversal…
This work investigates the feasibility of electrical valley filtering for holes in transition metal dichalcogenides. We look specifically into the scheme that utilizes a potential barrier to produce valley-dependent tunneling rates, and…
The valley degree of freedom of electrons in solids has been proposed as a new type of information carriers beyond the electronic charge and spin. Recent experimental demonstrations of the optical orientation of the valley polarization and…
Valleytronics is a research field utilizing a valley degree of freedom of electrons for information processing and storage. A strong valley polarization is critical for realistic valleytronic applications. Here, we predict a tunneling…
The valley Hall effect (VHE) holds great promise for valleytronic applications by leveraging the valley degree of freedom. To date, research on VHE has focused on its linear response to an applied current, leaving nonlinear valley responses…
We uncover a new origin of the planar Hall effect - as an intrinsic property of layer coherent electrons - that exists even in bilayer and trilayer atomically thin limit. It reforms the existing theories requiring three-dimensional orbital…
Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum…
Valleytronics harnesses the valley degree of freedom -- energy-degenerate extrema in the electronic band structure -- for information storage and processing. Valley Hall effect (VHE) is a cornerstone of valleytronics, enabling electric…
Electrons hopping in two-dimensional honeycomb lattices possess a valley degree of freedom in addition to charge and spin. In the absence of inversion symmetry, these systems were predicted to exhibit opposite Hall effects for electrons…
We theoretically investigate gate-defined graphene superlattices with broken inversion symmetry as a platform for realizing tunable valley dependent transport. Our analysis is motivated by recent experiments [C. Forsythe et al., Nat.…
The Valley Hall effect provides a popular route to engineer robust waveguides for bosonic excitations such a photons and phonons. The almost complete absence of backscattering in many experiments has its theoretical underpinning in a…
Under time-reversal symmetry, a linear charge Hall response is usually deemed to be forbidden by the Onsager relation. In this work, we discover a scenario for realizing a time-reversal even linear charge Hall effect in a non-isolated…
Valley Hall effect is an appearance of the valley current in the direction transverse to the electric current. We develop the microscopic theory of the valley Hall effect in two-dimensional semiconductors where the electrons are dragged by…
The topological valley Hall effect was predicted as a consequence of the bulk topology of electronic systems. Now it has been observed in photonic crystals, showing that both topology and valley are innate to classical as well as quantum…
We study the quantum valley Hall effect and related domain wall modes in twisted bilayer graphene at a large commensurate angle. Due to the quantum valley and sub-valley Hall effect, a small deviation from the commensurate angle generates…
We develop a theory of Coulomb interaction-mediated contribution to valley Hall effect (VHE) in two-dimensional non-centrosymmetric gapped Dirac materials. We assume that the bare valley Hall current occurs in the system due to the presence…
Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field…