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Van der Waals heterostructures (vdWHs) combine different layered materials with properties of interest,1 such as two-dimensional (2D) semimetals, semiconductors, magnets or superconductors. These heterostructures provide the possibility of…

When monolayers of two-dimensional (2D) materials are stacked into van der Waals structures, interlayer electronic coupling can introduce entirely new properties, as exemplified by recent discoveries of moir\'e bands that host highly…

The introduction of 'twist' or relative rotation between two atomically thin van der Waals (vdW) membranes gives rise to periodic Moire potential, leading to a substantial altercation of the band structure of the planar assembly. While most…

Mesoscale and Nanoscale Physics · Physics 2020-12-30 Phanibhusan S Mahapatra , Bhaskar Ghawri , Kenji Watanabe , Takashi Taniguchi , Subroto Mukerjee , Arindam Ghosh

Sliding ferroelectricity is emerging as a distinct and promising mechanism for realizing ferroelectricity in low-dimensional systems, offering new design principles beyond the conventional ferroelectric mechanism. Further, the coexistence…

Materials Science · Physics 2025-12-23 Akshay Mahajan , Awadhesh Narayan

A ferroelectric is a material with a polar structure whose polarity can be reversed by applying an electric field. In metals, the itinerant electrons tend to screen electrostatic forces between ions, helping to explain why polar metals are…

As an emerging magnetic phase, altermagnets with compensated magnetic order and non-relativistic spin-splitting have attracted widespread attention. Currently, strain engineering is considered to be an effective method for inducing valley…

Materials Science · Physics 2024-10-07 Yun-Qin Li , Yu-Ke Zhang , Xin-Le Lu , Ya-Ping Shao , Zhi-qiang Bao , Jun-Ding Zheng , Wen-Yi Tong , Chun-Gang Duan

Two-dimensional (2D) ferroelectrics, which is rare in nature, enable high-density non-volatile memory with low energy consumption. Here, we propose a theory of bilayer stacking ferroelectricity (BSF), in which, two stacked layers of the…

Materials Science · Physics 2023-04-19 Junyi Ji , Changsong Xu , H. J. Xiang

Van der Waals (vdW) assembly of two-dimensional materials has been long recognized as a powerful tool to create unique systems with properties that cannot be found in natural compounds. However, among the variety of vdW heterostructures and…

Twistronics rooted in the twist operation towards bilayer van der Waals crystals is of both theoretical and technological importance. The realize of the correlated electronic behaviors under this operation encourages enormous effort to the…

Mesoscale and Nanoscale Physics · Physics 2018-11-22 Yu-Hao Shen , Wen-Yi Tong , He Hu , Chun-Gang Duan

Dislocation is a very important one-dimensional defect in ferroelectrics. This work introduces an easy and flexible model of implementing the edge dislocation by introducing eigenstrain at the interface, and it could be easily extended to…

Materials Science · Physics 2024-03-26 Shuai Wang , Li-Hua Shao

The interplay between ferroelectricity and band topology can give rise to a wide range of both fundamental and applied research. Here, we map out the emergence of nontrivial corner states in two-dimensional ferroelectrics, and remarkably…

Materials Science · Physics 2023-02-01 Ning Mao , Runhan Li , Xiaorong Zou , Ying Dai , Baibiao Huang , Chengwang Niu

The possibility to combine and finetune properties of functional molecular materials by chemical design is particularly relevant for organic ferroelectrics. In this work, we investigate a class of organic molecular materials that show…

Materials Science · Physics 2025-07-16 H. Mager , M. Litterst , Sophia Klubertz , S. V. Haridas , O. Shyshov , M. von Delius , M. Kemerink

Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D…

Domain walls in ferroelectrics exhibit a plethora of phases and functionalities not found in the bulk. The interplay of electrostatic, chemical, topological, and distortive inhomogeneities at the walls can be so complex, however, that this…

Mesoscale and Nanoscale Physics · Physics 2017-02-23 Gabriele De Luca , Marta D. Rossell , Jakob Schaab , Nathalie Viart , Manfred Fiebig , Morgan Trassin

Field-induced domain wall dynamics in ferroelectric materials underpins multiple applications ranging from actuators to information technology devices and necessitates a quantitative description of the associated mechanisms including giant…

Disordered Systems and Neural Networks · Physics 2021-05-18 Yongtao Liu , Roger Proksch , Chun Yin Wong , Maxim Ziatdinov , Sergei V. Kalinin

Nanoscaled room-temperature ferroelectricity is ideal for developing advanced non-volatile high-density memories. However, reaching the thin film limit in conventional ferroelectrics is a long-standing challenge due to the possible critical…

Materials Science · Physics 2018-10-15 Siyuan Wan , Yue Li , Wei Li , Xiaoyu Mao , Wenguang Zhu , Hualing Zeng

Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and non-volatile electronic devices based on vertical and co-planar heterojunctions of 2D ferroic…

Two-dimensional (2D) materials that exhibit spontaneous magnetization, polarization or strain (referred to as ferroics) have the potential to revolutionize nanotechnology by enhancing the multifunctionality of nanoscale devices. However,…

By using ab-initio-accurate force fields and molecular dynamics simulations we demonstrate that the layer stiffness has profound effects on the superlubricant state of two-dimensional van der Waals heterostructures. These are engineered to…

Materials Science · Physics 2021-07-02 Rui Dong , Alessandro Lunghi , Stefano Sanvito

We demonstrate electrically switchable, non-volatile dipoles in graphene/thin hBN/$\alpha$-RuCl$_3$ heterostructures, stabilized purely by interfacial charge transfer across an atomically thin dielectric barrier. This mechanism requires no…