Related papers: RowPress Vulnerability in Modern DRAM Chips

Memory isolation is critical for system reliability, security, and safety. Unfortunately, read disturbance can break memory isolation in modern DRAM chips. For example, RowHammer is a well-studied read-disturb phenomenon where repeatedly…

DRAM read disturbance can break memory isolation, a fundamental property to ensure system robustness (i.e., reliability, security, safety). RowHammer and RowPress are two different DRAM read disturbance phenomena. RowHammer induces bitflips…

Modern DRAM is vulnerable to read disturbance (e.g., RowHammer and RowPress) that significantly undermines the robust operation of the system. Repeatedly opening and closing a DRAM row (RowHammer) or keeping a DRAM row open for a long…

We provide an overview of recent developments and future directions in the RowHammer vulnerability that plagues modern DRAM (Dynamic Random Memory Access) chips, which are used in almost all computing systems as main memory. RowHammer is…

Our ISCA 2014 paper provided the first scientific and detailed characterization, analysis, and real-system demonstration of what is now popularly known as the RowHammer phenomenon (or vulnerability) in modern commodity DRAM chips, which are…

Aggressive memory density scaling causes modern DRAM devices to suffer from RowHammer, a phenomenon where rapidly activating a DRAM row can cause bit-flips in physically-nearby rows. Recent studies demonstrate that modern DRAM chips,…

Read disturbance in modern DRAM chips is a widespread phenomenon and is reliably used for breaking memory isolation, a fundamental building block for building robust systems. RowHammer and RowPress are two examples of read disturbance in…

RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in other physically nearby DRAM rows. RowHammer solutions perform preventive actions (e.g.,…

DRAM chips are vulnerable to read disturbance phenomena (e.g., RowHammer and RowPress), where repeatedly accessing or keeping open a DRAM row causes bitflips in nearby rows. Attackers leverage RowHammer bitflips in real systems to take over…

We experimentally demonstrate a new widespread read disturbance phenomenon, ColumnDisturb, in real commodity DRAM chips. By repeatedly opening or keeping a DRAM row (aggressor row) open, we show that it is possible to disturb DRAM cells…

We will discuss the RowHammer problem in DRAM, which is a prime (and likely the first) example of how a circuit-level failure mechanism in Dynamic Random Access Memory (DRAM) can cause a practical and widespread system security…

DRAM cells are susceptible to Data-Disturbance Errors (DDE), which can be exploited by an attacker to compromise system security. Rowhammer is a well-known DDE vulnerability that occurs when a row is repeatedly activated. Rowhammer can be…

As process technology scales down to smaller dimensions, DRAM chips become more vulnerable to disturbance, a phenomenon in which different DRAM cells interfere with each other's operation. For the first time in academic literature, our ISCA…

RowHammer is a circuit-level DRAM vulnerability where repeatedly accessing (i.e., hammering) a DRAM row can cause bit flips in physically nearby rows. The RowHammer vulnerability worsens as DRAM cell size and cell-to-cell spacing shrink.…

This retrospective paper describes the RowHammer problem in Dynamic Random Access Memory (DRAM), which was initially introduced by Kim et al. at the ISCA 2014 conference~\cite{rowhammer-isca2014}. RowHammer is a prime (and perhaps the…

Modern DRAM chips are subject to read disturbance errors. State-of-the-art read disturbance mitigations rely on accurate and exhaustive characterization of the read disturbance threshold (RDT) (e.g., the number of aggressor row activations…

We experimentally demonstrate the effects of read disturbance (RowHammer and RowPress) and uncover the inner workings of undocumented read disturbance defense mechanisms in High Bandwidth Memory (HBM). Detailed characterization of six real…

As memory scales down to smaller technology nodes, new failure mechanisms emerge that threaten its correct operation. If such failure mechanisms are not anticipated and corrected, they can not only degrade system reliability and…

RowHammer is a circuit-level DRAM vulnerability, where repeatedly activating and precharging a DRAM row, and thus alternating the voltage of a row's wordline between low and high voltage levels, can cause bit flips in physically nearby…

Recent advancements in side-channel attacks have revealed the vulnerability of modern Deep Neural Networks (DNNs) to malicious adversarial weight attacks. The well-studied RowHammer attack has effectively compromised DNN performance by…