Related papers: Vertical CNT-Si Photodiode Array
Hybridisation is a powerful strategy towards the next generation of multifunctional materials for environmental and sustainable energy applications. Here, we report a new inorganic nanocarbon hybrid material prepared with atomically…
Advanced nanomaterials with enhanced optical and photocatalytic properties for the photodegradation of organic pollutants, in particular pharmaceuticals and personal care products (PPCPs), were successfully prepared by a swift one-pot…
The electrical conductivity of metallic carbon nanotubes (CNTs) quickly saturates with respect to bias voltage due to scattering from a large population of optical phonons. Decay of these dominant scatterers in pristine CNTs is too slow to…
Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top…
We use numerical simulations to investigate the properties of metal contacts to three-dimensional arrays of carbon nanotubes (CNTs). For undoped arrays top-contacted with high or low work function metals, electrostatic screening is very…
Based on the reported ion migration under electric field in hybrid lead halide perovskites we have developed a bright, light emitting electrochemical cell with CH3NH3PbBr3 single crystals directly grown on vertically aligned carbon nanotube…
$\beta$-Ga$_2$O$_3$ is gaining attention as a promising semiconductor for next-generation high-power, high-efficiency, and high-temperature electronic devices, thanks to its exceptional material properties. However, challenges such as the…
Nanometer thin single-walled carbon nanotube (CNT) films collected from the aerosol chemical deposition reactors have gathered attention for their promising applications. Densification of these pristine films provides an important way to…
One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap…
A freestanding film of vertically aligned single-walled carbon nanotubes (VA-SWNTs) synthesized by the alcohol catalytic chemical vapor deposition (ACCVD) method was observed directly by transmission electron microscopy (TEM). These…
We optimized micro-holes in a thin slab for fast Si photodetectors at wavelength 800-950nm. Lateral modes are shown to be responsible for the effective light trapping. Small disorder and cone hole shapes helped achieve uniform quantum…
Involving deterministically nonlinear photoresponse in on-chip photodetector is intriguing to develop sophisticated functions in photonic integrated circuits, such as in-sensor computing and optoelectronic mixing, though the corresponding…
Visible and infrared photons can be detected with a broadband response via the internal photoeffect. By using plasmonic nanostructures, i.e. nanoantennas, wavelength selectivity can be introduced to such detectors through geometry-dependent…
In a CMOS image sensor pixel, fast and complete charge transfer from pinned photodiode (PPD) is desired and necessary in some applications. In special cases such as time-of-flight imaging or large pinned photodiodes, the PPD potential well…
The electrical and photodiode characteristics of ensemble and single p-GaN nanowire and n-Si heterojunction devices were studied. Ideality factor of the single nanowire p-GaN/n-Si device was found to be about three times lower compared to…
Recent advances in nanotechnology have provided new materials which have the potential to surpass copper and aluminum alloys in electrical conductivity, weight and ampacity [2-6]. Among these carbon nanotubes (CNTs) stand out due to their…
Semiconductor nanowires offer the possibility to grow high-quality quantum-dot heterostructures, and, in particular, CdSe quantum dots inserted in ZnSe nanowires have demonstrated the ability to emit single photons up to room temperature.…
Boron nitride is a promising material for nanotechnology applications due to its two-dimensional graphene-like, insulating, and highly-resistant structure. Recently it has received a lot of attention as a substrate to grow and isolate…
Metallic nanoslit arrays integrated on germanium metal-semiconductor-metal photodetectors show many folds of absorption enhancement for transverse-magnetic polarization in the telecommunication C-band. Such high enhancement is attributed to…
Visible and near-infrared spectrum photonic integrated circuits are quickly becoming a key technology to address the scaling challenges in quantum information and biosensing. Thus far, integrated photonic platforms in this spectral range…