Related papers: An integrated electro-optically tunable multi-chan…
We demonstrate an integrated electro-optically tunable narrow-linewidth III-V laser with an output power of 738.8 {\mu}W and an intrinsic linewidth of 45.55 kHz at the C band. The laser cavity is constructed using a fiber Bragg grating…
We demonstrate a hybrid integrated and widely tunable diode laser with an intrinsic linewidth as narrow as 40 Hz, achieved with a single roundtrip through a low-loss feedback circuit that extends the cavity length to 0.5 meter on a chip.…
We demonstrate an external cavity laser with intrinsic linewidth below 100 Hz around an operating wavelength of 852 nm, selected for its relevance to laser cooling and manipulation of cesium atoms. This system achieves a maximum CW output…
Light source is indispensable component in on-chip system. Compared with hybrid or heterogeneous integrated laser, monolithically integrated laser is more suitable for high density photonic integrated circuit (PIC) since the capability of…
We demonstrate an external cavity laser formed by combining a silicon nitride photonic integrated circuit with a reflective semiconductor optical amplifier. The laser uses an alignment tolerant edge coupler formed by a multi-mode waveguide…
Mode-locked lasers are of interest for applications such as biological imaging, non-linear frequency conversion, and single-photon generation. In the infrared, chip-integrated mode-locked lasers have been demonstrated through integration of…
Recent advances in the development of ultra-low loss silicon nitride integrated photonic circuits have heralded a new generation of integrated lasers capable of reaching fiber laser coherence. However, these devices presently are based on…
Precision applications including quantum computing and sensing, mmWave/RF generation, and metrology, demand widely tunable, ultra-low phase noise lasers. Today, these experiments employ table-scale systems with bulk-optics and isolators to…
We demonstrate monolithic integration of an electro-optically (EO) tunable microring laser on lithium niobate on insulator (LNOI) platform. The device is fabricated by photolithography assisted chemo-mechanical etching (PLACE), and the pump…
We present hybrid-integrated extended cavity diode lasers tunable around 637 nm, with a gain-wide spectral coverage of 8 nm. This tuning range allows addressing the zero-phonon line of nitrogen vacancy centers and includes the wavelength of…
Portable mid-infrared (mid-IR) spectroscopy and sensing applications require widely tunable, narrow linewidth, chip-scale, single-mode sources without sacrificing significant output power. However, no such lasers have been demonstrated…
Thin-film lithium niobate (TFLN) has emerged as a promising platform for the realization of high performance chip-scale optical systems, spanning a range of applications from optical communications to microwave photonics. Such applications…
Tunable lasers are essential for optical communication, spectroscopy, and precision sensing, where flexible and fast control of the laser wavelength is needed. However, conventional tunable laser systems often rely on mechanical actuation,…
Photonic integration offers the potential to bring complex high-performance optical systems to the form factor of a compact semiconductor chip. However, the range of system functions accessible critically depends on the extent to which…
Integrated semiconductor mode-locked lasers have shown promise in many applications and are readily fabricated using generic InP photonic integration platforms. However, the passive waveguides offered in such platforms have relatively high…
Tunable lasers emitting at a 2-3 $\mu$m wavelength range and compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaSb-based semiconductor gain chips with Si$_3$N$_4$ photonic…
Recent advances in the processing of thin-film LNOI have enabled low-loss photonic integrated circuits, modulators with improved half-wave voltage, electro-optic frequency combs and novel on-chip electro-optic devices, with applications…
The lack of high power integrated lasers have been limiting silicon photonics. Despite much progress made in chip-scale laser integration, power remains below the level required for key applications. The main inhibiting factor for high…
Widely-tunable and narrow-linewidth integrated lasers across all visible wavelengths are necessary to enable on-chip technologies such as quantum photonics, optical trapping, and biophotonics. However, such lasers have not been realized due…
Extending the cavity length of diode lasers with feedback from Bragg structures and ring resonators is highly effective for obtaining ultra-narrow laser linewidths. However, cavity length extension also decreases the free-spectral range of…