Related papers: Optical activity and phase transformations in {\ga…
Nominally phase-pure $\gamma$-$Ga_2O_3$ was deposited on (100) $MgAl_2O_4$ within a narrow temperature window centered at $\sim$470 $^{\circ}$C using metal-organic chemical vapor deposition (MOCVD). The film deposited at 440 $^{\circ}$C…
We present a comprehensive investigation of reconstructions on $\beta$-Ga$_2$O$_3$(001) combining first-principles calculations with experimental observations. Using ab initio atomistic thermodynamics and replica-exchange grand-canonical…
Structural and electronic properties of amorphous and single-phase polycrystalline films of gamma- and kappa-In2Se3 have been measured. The stable gamma phase nucleates homogeneously in the film bulk and has a high resistivity, while the…
The question of optical bandgap anisotropy in the monoclinic semiconductor $\beta$-Ga2O3 was revisited by combining accurate optical absorption measurements with theoretical analysis, performed using different advanced computation methods.…
In Gallium nanoparticles of 100 nm in diameter grown on the tip of an optical fiber from an atomic beam we observed equilibrium coexistence of gamma, beta and liquid structural phases that can be controlled by e-beam excitation in a highly…
This work reports the successful formation of Ag and Au nanoparticles in $\beta$-Ga$_2$O$_3$ single-crystals by ion implantation and annealing at 550 {\deg}C. X-ray diffraction measurements revealed that nanoparticles were formed after the…
$\beta$-Ga$_2$O$_3$ is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission electron microscopy (STEM), we find the…
Ga2O3 thin films were deposited by reactive magnetron sputtering from a liquid gallium target. The influence of deposition temperature, substrate type, and discharge parameters on the structural and electrical properties was systematically…
The structural evolution with temperature of pure silica (SiO2), sodium-silicate (5Na2O-95SiO2, 10Na2O-90SiO2 and 25Na2O-75SiO2) and albite (15Na2O-15Al2O3-75SiO2) glasses previously densified from hot compression is monitored with a…
Two-dimensional (2D) van der Waals (vdW) materials and their bilayers have stimulated enormous interests in fundamental researches and technological applications. Recently, a group of 2D vdW III2-VI3 materials with out-of-plane…
Bismuth oxide (Bi$_2$O$_3$) is a polymorphic material of considerable technological interest, with applications spanning from heterogeneous catalysis to next-generation nanoelectronics. Despite its relevance, systematic investigations of…
The existence of multiple amorphous states, or polyamorphism, remains one of the most debated phenomena in disordered matter, particularly regarding its microscopic origin and impact on glassy dynamics. Profiting of the enhanced data…
Tailoring the nanomorphology of organic photoactive layers through a specialized chain of processing steps is an imperative challenge on the path towards reliable and performant organic electronic manufacturing. This hurdle generally proves…
The discovery of superconductivity with onset temperature of ~80 K in pressurized bilayer Ruddlesden-Popper La3Ni2O7-d has attracted much attention. Despite intense research, determination of the exact oxygen content and understanding of…
Coatings of (Al1-xVx)2O3, with x ranging from 0 to 1, were deposited by pulsed DC reactive sputter deposition on Si(100) at a temperature of 550 {\deg}C. XRD showed three different crystal structures depending on V-metal fraction in the…
Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with…
The kinetics of the $\kappa$ to $\beta$-Ga$_2$O$_3$ phase transformation were investigated in five batches of nominally phase-pure $\kappa$-Ga2O3 thin films heteroepitaxially grown on c-plane sapphire, with film thickness ranging from 700…
We report, for the first time, the characterizations on optical nonlinearities of beta-phase gallium oxide (\b{eta}-Ga2O3), where both (010) \b{eta}-Ga2O3 and (-201) \b{eta}-Ga2O3 were examined for two-photon absorption (TPA) coefficient,…
The structure of titanium films on \alpha - Al2O3(0001) surfaces at room temperature was investigated through in situ reflection high energy electron diffraction (RHEED). The \alpha-phase of titanium was observed to grow with the Ti(0001)…
Radiation-induced crystal lattice damage and its recovery in wide bandgap oxides, in particular beta-gallium oxide (beta-Ga2O3), is a complex process. This paper presents the first study on the process of the defects accumulation in…