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Magnetic tunnel junction-based molecular spintronics devices (MTJMSDs) are designed by covalently connecting the paramagnetic molecules across two ferromagnets (FM) electrodes of a magnetic tunnel junction (MTJ). MTJMSD provides…
Magnetic anisotropies have key role to taylor magnetic behavior in ferromagnetic systems. Further, they are also essential elements to manipulate the thermoelectric response in Anomalous Nernst (ANE) and Longitudinal Spin Seebeck systems…
Permanent magnets draw their properties from a complex interplay of chemical composition and phase, each with their associated intrinsic magnetic properties. Gaining an understanding of these interactions is the key to deciphering the…
Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of…
Studies of magnetization dynamics have incessantly facilitated the discovery of fundamentally novel physical phenomena, making steady headway in the development of magnetic and spintronics devices. The dynamics can be induced and detected…
In this work we show the presence of a magnetoelectric coupling in silicon-nitride gated Pt/Co/Pt heterostructures using X-ray photoemission electron microscopy (XPEEM). We observe a change in magnetic anisotropy in the form of domain wall…
A quantitative mathematical model for the critical thickness of strained epitaxial metal films is presented, at which the magnetic moment experiences a reorientation from in-plane to perpendicular magnetic anisotropy. The model is based on…
The electric field effect on magnetic anisotropy was studied in an ultrathin Fe(001) monocrystalline layer sandwiched between Cr buffer and MgO tunnel barrier layers, mainly through post-annealing temperature and measurement temperature…
We study the ferromagnetic layer thickness dependence of the voltage-controlled magnetic anisotropy (VCMA) in gated CoFeB/MgO heterostructures with heavy metal underlayers. When the effective CoFeB thickness is below ~1 nm, the VCMA…
Ferroic materials (ferromagnetic, ferroelectric, ferroelastic) usually divide into domains with different orientations of their order parameter. Coupling different ferroic systems creates new functionalities, for instance the electrical…
We investigate the anisotropy of magnetic reversal and current-driven domain wall motion in annealed Ga_0.95Mn_0.05As thin films and Hall bar devices with perpendicular magnetic anisotropy. Hall bars with current direction along the [110]…
The suitability of a particular material for use in magnetic devices is determined by the process of magnetization reversal/relaxation, which in turn depends on the magnetic anisotropy. Therefore, designing new ways to control magnetic…
The electric magnetochiral anisotropy is a nonreciprocal phenomenon accessible via second harmonic transport in noncentrosymmetric, time-reversal invariant materials, in which the rectification of current, ${\bf I}$, can be controlled by an…
We show how the axial (chiral) anomaly induces a spin torque on the magnetization in magnetic Weyl semimetals. The anomaly produces an imbalance in left- and right-handed chirality carriers when non-orthogonal electric and magnetic fields…
Magnetic domain walls are pinned strongly by abrupt changes in magnetic anisotropy. When driven into oscillation by a spin-polarized current, locally pinned domain walls can be exploited as tunable sources of short-wavelength spin waves.…
Artificial multiferroics consist of two types of ferroic materials, typically a ferroelectric and ferromagnet, often coupled interfacially by magnetostriction induced by the lattice elongations in the ferroelectric. In BaTiO3 the magnitude…
A central prospect of antiferromagnetic spintronics is to exploit magnetic properties that are unavailable with ferromagnets. However, this poses the challenge of accessing such properties for readout and control. To this end, light-induced…
Electrical control of magnetism has been a major techonogical pursuit of the spintronics community, owing to its far-reaching implications for data storage and transmission. Here, we propose and analyze a new mechanism for electrical…
The study investigates the manipulation of the magnetic anisotropy in a thick (1 $\mu$m) Ni$_{90}$Fe$_{10}$ layer electrodeposited on a ferroelectric BaTiO$_3$(001) substrate, using a combination of Magneto-optical Kerr Effect,…
The effect of magnetic domain boundaries displacement induced by electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) crystallographic orientation). The effect is odd with respect to the electric field…