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Two-dimensional ferroelectrics can maintain vertical polarization up to room temperature, and are, therefore, promising for next-generation nonvolatile memories. Although natural two-dimensional ferroelectrics are few, moir\'{e}…

Mesoscale and Nanoscale Physics · Physics 2024-04-30 Renjun Du , Jingkuan Xiao , Di Zhang , Xiaofan Cai , Siqi Jiang , Fuzhuo Lian , Kenji Watanabe , Takashi Taniguchi , Lei Wang , Geliang Yu

In optically excited two-dimensional phototransistors, charge transport is often affected by photodoping effects. Recently, it was shown that such effects are especially strong and persistent for graphene/h-BN heterostructures, and that…

Applied Physics · Physics 2019-03-06 Jorge Quereda , Talieh S. Ghiasi , Caspar H. van der Wal , Bart J. van Wees

Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary…

In twisted layered materials (t-LMs), an inter-layer rotation can break inversion symmetry and create an interfacial array of staggered out-of-plane polarization due to AB/BA stacking registries. This symmetry breaking can also trigger the…

Monolayer hBN has attracted interest as a potentially weakly interacting 2D insulating layer in heterostructures. Recently, wafer-scale hBN growth on Cu(111) has been demonstrated for semiconductor chip fabrication processes and transistor…

The stacking order and twist angle provide abundant opportunities for engineering band structures of two-dimensional materials, including the formation of moire bands, flat bands, and topologically nontrivial bands. The inversion symmetry…

The predicted formation of moire superlattices leading to confined excitonic states in heterostructures formed by stacking two lattice mismatched transition metal dichalcogenide (TMD) monolayers was recently experimentally confirmed. Such…

The high-quality structures containing semiconducting transition metal dichalcogenides (S-TMDs) monolayer (MLs) required for optical and electrical studies are achieved by their encapsulation in hexagonal BN (hBN) flakes. To examine the…

Mesoscale and Nanoscale Physics · Physics 2023-08-14 A. O. Slobodeniuk , M. R. Molas

Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of…

Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D…

We demonstrate a new approach for dynamically manipulating the optical response of an atomically thin semiconductor, a monolayer of MoSe2, by suspending it over a metallic mirror. First, we show that suspended van der Waals heterostructures…

Two-dimensional materials give access to the ultimate physical limits of Photonics with appealing properties for ultracompact optical components such as waveguides and modulators. Specifically, in monolayer semiconductors, a strong…

Monolayers of semiconducting transition metal dichalcogenides (TMDCs) with unique spin-valley contrasting properties and remarkably strong excitonic effects continue to be a subject of intense research interests. These model 2D…

The emerging ferroelectric properties of two-dimensional (2D) heterostructures are at the forefront of science and prospective technology. In moir\'e bilayers, twisting or heterostructuring causes local atomic reconstruction, which even at…

Materials Science · Physics 2025-03-18 Wilson Nieto Luna , Robin Smeyers , Cem Sevik , Lucian Covaci , Milorad V. Milošević

This study explores the world of across-layer sliding ferroelectricity in multilayer hexagonal boron nitride (hBN) and gallium nitride (hGaN), aiming to control out-of-plane polarization. By investigating the effects of sliding single or…

Materials Science · Physics 2025-04-08 Sanber Vizcaya , Felipe Perez Riffo , Juan M. Florez , Eric Súarez Morell

Sliding ferroelectricity in bilayer hexagonal boron nitride (h-BN) offers compelling prospects for next-generation non-volatile memory, yet the atomistic dynamics of electric-field-driven polarization switching remain poorly understood.…

Materials Science · Physics 2026-05-01 Yinan Wang , Poyen Chen , Teruyasu Mizoguchi

Long-range moire patterns in twisted WSe2 enable a built-in, moire-length-scale ferroelectric polarization that can be directly harnessed in electronic devices. Such a built-in ferroic landscape offers a compelling means to enable…

Materials Science · Physics 2025-12-10 Arup Singha , Shaili Sett , Kenji Watanabe , Takashi Taniguchi , Arindam Ghosh , Rahul Debnath

Semiconductor moir\'e heterostructures exhibit rich correlation-induced many-body phenomena with signatures of emergent magnetism, Mott insulating states or generalized Wigner crystals observed in optical spectroscopy by probing intralayer…

Active metasurfaces have recently emerged as compact, lightweight, and efficient platforms for dynamic control of electromagnetic fields and optical responses. However, the complexities associated with their post-fabrication tunability…

Interfacial interactions in two parallel-stacked hexagonal boron-nitride (hBN) layers facilitate sliding ferroelectricity, enabling novel device functionalities. Additionally, when Bernal or twisted bilayer graphene is aligned with an hBN…

Mesoscale and Nanoscale Physics · Physics 2026-04-23 Tianyu Zhang , Yueyang Wang , Hongxia Xue , Kenji Watanabe , Takashi Taniguchi , Dong-Keun Ki
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