Related papers: Memristive response and neuromorphic functionality…
Ferroelectric memristors have attracted much attention as a type of nonvolatile resistance switching memories in neuromorphic computing, image recognition, and information storage. Their resistance switching mechanisms have been studied…
The persistent and switchable polarization of ferroelectric materials based on HfO$_2$-based ferroelectric compounds, compatible with large-scale integration, are attractive synaptic elements for neuromorphic computing. To achieve a record…
Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of metal/ferroelectric oxide/metal devices relies on the…
Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially…
Neuromorphic computing aims to develop energy-efficient devices that mimic biological synapses. One promising approach involves memristive devices that can dynamically adjust their electrical resistance in response to stimuli, similar to…
Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors…
With the broad recent research on ferroelectric hafnium oxide for non-volatile memory technology, depolarization effects in HfO2-based ferroelectric devices gained a lot of interest. Understanding the physical mechanisms regulating the…
In this paper, the resistive switching and neuromorphic behavior of memristive devices based on parylene, a polymer both low-cost and safe for the human body, is comprehensively studied. The Metal/Parylene/ITO sandwich structures were…
In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…
Ferroelectric memristive devices based on hafnia are promising systems for neuromorphic electronics, yet the interplay between polarization-modulated resistive changes and defect-mediated transport often leads to complex and debated…
Memristors are an electronic device whose resistance depends on the voltage history that has been applied to its two terminals. Despite its clear advantage as a computational element, a suitable transport model is lacking for the special…
Memristors have demonstrated immense potential as building blocks in future adaptive neuromorphic architectures. Recently, there has been focus on emulating specific synaptic functions of the mammalian nervous system by either tailoring the…
The possibility to develop neuromorphic computing devices able to mimic the extraordinary data processing capabilities of biological systems spurs the research on memristive systems. Memristors with additional functionalities such as robust…
The memristive device is one of the basic elements of novel, brain-inspired, fast, and energy-efficient information processing systems in which there is no separation between memorization and information analysis functions. Since the first…
Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition,…
Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs. Also, with the known electrical response of a memristor, one…
Memristive devices have drawn considerable research attention due to their potential applications in non-volatile memory and neuromorphic computing. The combination of resistive switching devices with light-responsive materials is…
HfO2-based ferroelectric films have attracted considerable attention as their nanoscale ferroelectricity and compatibility with cmos technology, fulfilling demands of emerging memory technologies. However, as films scale down,…
Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical quantities and memory paradigms are requested for…
The exponential growth of edge artificial intelligence demands material-focused solutions to overcome energy consumption and latency limitations when processing real-time temporal data. Physical reservoir computing (PRC) offers an…