Related papers: A high-temperature multiferroic Tb$_2$(MoO$_4$)$_3…
Controlling magnetism by using electric fields is a goal of research towards novel spintronic devices and future nano-electronics. For this reason, multiferroic heterostructures attract much interest. Here we provide experimental evidence,…
The promise of a strong magnetoelectric coupling in a multiferroic material is not only of fundamental interest, but also forms the basis of next generation memory devices where the direction of magnetization can be reversed by an external…
We find the realization of large converse magnetoelectric (ME) effects at room temperature in a multiferroic hexaferrite Ba$_{0.52}$Sr$_{2.48}$Co$_{2}$Fe$_{24}$O$_{41}$ single crystal, in which rapid change of electric polarization in low…
We present a unique example of giant magnetoelectric effect in a conventional multiferroic HoMnO3, where polarization is very large (~56 mC/m2) and the ferroelectric transition temperature is higher than the magnetic ordering temperature by…
Artificial multiferroics consist of two types of ferroic materials, typically a ferroelectric and ferromagnet, often coupled interfacially by magnetostriction induced by the lattice elongations in the ferroelectric. In BaTiO3 the magnitude…
Multiferroic materials, in which ferroelectric and magnetic ordering coexist, are of fundamental interest for the development of novel memory devices that allow for electrical writing and non-destructive magnetic readout operation. The…
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…
The magnetization and electric polarization of a polar antiferromagnet Fe$_2$Mo$_3$O$_8$ are studied up to 66 T for spin-saturation magnetic fields applied along the polar axis. The magnetization process at 1.4 K exhibited multistep…
We have investigated the structural, magnetic and dielectric properties of Pb-based langasite compound Pb$_3$TeMn$_3$P$_2$O$_{14}$ both experimentally and theoretically in the light of metal-oxygen covalency, and the consequent generation…
From magnetic susceptibility, dielectric permittivity, electric polarization and specific heat measurements, we discover spin-induced ferroelectricity and magnetoelectric coupling in Mn3TeO6 and observe two successive magnetic transitions…
From lithium-ion batteries to high-temperature superconductors, oxide materials have been widely used in electronic devices. However, demands of future technologies require materials beyond oxides, as anion chemistries distinct from oxygen…
Antiferromagnets (AFMs) are presently considered as promising materials for applications in spintronics and random access memories due to the robustness of information stored in AFM state against perturbing magnetic fields (P. Wadley et…
Two-dimensional (2D) multiferroic materials with controllable magnetism have promising prospects in miniaturized quantum device applications, such as high-density data storage and spintronic devices. Here, using first-principles…
Our measured dielectric constant and mechanical response of multiferroic BiFeO3 indicate four phase transitions below room temperature. Features correlate with those reported at 50K (from a peak in the zero-field-cooled magnetic…
Composite multiferroics are materials exhibiting the interplay of ferroelectricity, magnetism, and strong electron correlations. Typical example --- magnetic nano grains embedded in a ferroelectric matrix. Coupling of ferroelectric and…
Geometrically frustrated structures combined with competing exchange interactions that have different magnitudes are known ingredients for achieving exotic properties. Herein, we studied detailed structural, magnetic, thermal (specific…
Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric…
Magnetoelectric (ME) effect is recognized for its utility for low-power electronic devices.Largest ME coefficients are often associated with phase transitions in which ferroelectricity is induced by magnetic order. Unfortunately, in these…
Ferrimagnetic spinel materials of formula AB2X4, where A and B are transition metals and X is oxygen or sulphur, hold promise for the realization of multiferroic characteristics. In this work, we report synthesis of spinel CoMn2O4 and…
In this paper the structural, magnetic, and dielectric properties of langasite compound Pb$_3$TeMn$_3$P$_2$O$_{14}$ have been investigated as a candidate of short-range magnetic correlations driven development of dielectric anomaly above…