Related papers: Magnetization dynamics driven by displacement curr…
Magnetic tunnel junctions (MTJs) are basic building blocks for devices such as magnetic random access memories (MRAMs). The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of MTJs…
Current-driven magnetization switching in low-resistance Co40Fe40B20/MgO/Co40Fe40B20 magnetic tunnel junctions (MTJs) is reported. The critical-current densities Jc required for current-driven switching in samples annealed at 270C and 300C…
We report the intrinsic critical current density (Jc0) in current-induced magnetization switching and the thermal stability factor (E/kBT, where E, kB, and T are the energy potential, the Boltzmann constant, and temperature, respectively)…
Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at…
We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and…
We study current-induced switching in magnetic tunnel junctions (MTJs) in the presence of a field-like spin-transfer torque and titled pinned-layer magnetization in the high current limit at finite temperature. We consider both the…
Ta/CoFeB/MgO trilayers with perpendicular magnetic anisotropy are expected to play a key role in the next generation of current and electric field switched memory and logic devices. In this study we use Kerr microscopy alongside electrical…
We investigated the effect of using a synthetic ferrimagnetic (SyF) free layer in MgO-based magnetic tunnel junctions (MTJs) on current-induced magnetization switching (CIMS), particularly for application to spin-transfer torque random…
Flexible electronic devices require the integration of multiple crucial components on soft substrates to achieve their functions. In particular, memory devices are the fundamental component for data storage and processing in flexible…
GaMnAs-based magnetic tunnel junction (MTJ) devices are characterized by in-plane and perpendicular-toplane magnetotransport at low temperatures. Perpendicular-to-plane transport reveals the typical tunneling magnetotransport (TMR) signal.…
Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of…
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…
We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ…
Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel…
The Discovery of giant tunnel electroresistance (TER) in Ferroelectric Tunnel Junction (FTJ) paves a futuristic possibility of utilizing the FTJ as a bistable resistive device with an enormously high ON/OFF ratio. In the last 20 years,…
The combination of spin-orbit coupling driven effects and multiferroic tunneling properties was explored experimentally in thin Pt/Co/BTO/LSMO multilayers. The presence of a Pt heavy metal allows for the spin current-induced magnetization…
Spin-momentum transfer between a spin-polarized current and a ferromagnetic layer can induce steady-state magnetization precession, and has recently been proposed as a working principle for ubiquitous radio-frequency devices for radar and…
The tunnel magnetoresistance (TMR) effect observed in magnetic tunnel junctions (MTJs) is commonly used in many spintronic applications because the effect can easily convert from local magnetic states to electric signals in a wide range of…
There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for non-volatile memory devices. With the aim of analysing potential materials for efficient current-operated magnetic junctions…
We comment on both recent progress and lingering puzzles related to research on magnetic tunnel junctions (MTJs). MTJs are already being used in applications such as magnetic-field sensors in the read heads of disk drives, and they may also…