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Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with…
Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs. Also, with the known electrical response of a memristor, one…
Resistive Random Access Memories (RRAMs) are being studied by the industry and academia because it is widely accepted that they are promising candidates for the next generation of high density nonvolatile memories. Taking into account the…
We systematically investigate the influence of polyvinyl formal (PVFM), commonly known as Formvar, in comparison to polycarbonate (PC) and polymethyl methacrylate (PMMA), as encapsulation materials on the strain performance of MoS2…
Manipulation of micro and nanoscale particles suspended in a fluidic medium is one among the defining goals of modern nanotechnology. Speckle tweezers (ST) by incorporating randomly distributed light fields have been used to apply…
Memristive associative learning has gained significant attention for its ability to mimic fundamental biological learning mechanisms while maintaining system simplicity. In this work, we introduce a high-order memristive associative…
Compact models of memristors are essential for simulating large-scale neuromorphic systems, yet they often do not include description of complex dynamics like volatile relaxation and synaptic plasticity. We introduce a modular,…
We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called…
Phase segregation is a critical phenomenon that influences the stability and performance of mixed halide perovskite based opto-electronic devices. In addition to the underlying physical mechanisms, the spatial pattern and randomness…
This article proposes a general approach to the simulation and design of a multilayer perceptron (MLP) network on the basis of cross-bar arrays of metal-oxide memristive devices. The proposed approach uses the ANNM theory, tolerance theory,…
Memristive devices, whose resistance can be controlled by applying a voltage and further retained, are attractive as possible circuit elements for neuromorphic computing. This new type of devices poses a number of both technological and…
Non-Volatile Memory (NVM) cells are used in neuromorphic hardware to store model parameters, which are programmed as resistance states. NVMs suffer from the read disturb issue, where the programmed resistance state drifts upon repeated…
Neuromorphic computing is a brainlike information processing paradigm that requires adaptive learning mechanisms. A spiking neuro-evolutionary system is used for this purpose; plastic resistive memories are implemented as synapses in…
We present new computational building blocks based on memristive devices. These blocks, can be used to implement either supervised or unsupervised learning modules. This is achieved using a crosspoint architecture which is an efficient…
Memristors are among the most promising elements for modern microelectronics, having unique properties such as quasi-continuous change of conductance and long-term storage of resistive states. However, identifying the physical mechanisms of…
Usually, resistive switching (RS) devices show digital RS memory (sharp SET and RESET process), which is most suitable for digital data storage applications. Some RS devices also manifest ideal memristive behavior or analog memory…
Memristors can mimic the functions of biological synapse, where it can simultaneously store the synaptic weight and modulate the transmitted signal. Here, we report Nb/Nb2O5/Pt based memristors with bipolar resistive switching, exhibiting…
Memristors are passive elements that allow us to store information using a single element per bit. However, this is not the only utility of the memristor. Considering the physical chemical structure of the element used, the memristor can…
Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…
This paper presents an innovative approach to intraoperative Optical Coherence Tomography (iOCT) image segmentation in ophthalmic surgery, leveraging statistical analysis of speckle patterns to incorporate statistical pathology-specific…