Related papers: Ferroelectrically-enhanced Schottky barrier transi…
Neuromorphic computing aims to replicate the brain's remarkable energy efficiency and parallel processing capabilities for large-scale artificial intelligence applications. In this work, we present a comprehensive comparative study of three…
Antiferromagnets are promising materials for future spintronic applications due to their unique properties including zero stray fields, robustness versus external magnetic fields and ultrafast dynamics, which have attracted extensive…
Magnetic skyrmions, due to their topological stability and high mobility, are strong candidates for information carriers in spintronic devices. To advance their practical applications, a detailed understanding of their nucleation and…
In 2D-semiconductor-based field-effect transistors and optoelectronic devices, metal-semiconductor junctions are one of the crucial factors determining device performance. The Fermi-level (FL) pinning effect, which commonly caused by…
Ferroelectrics offer a promising materials platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET…
Deep 'Analog Artificial Neural Networks' (ANNs) perform complex classification problems with remarkably high accuracy. However, they rely on humongous amount of power to perform the calculations, veiling the accuracy benefits. The…
This work proposes a novel logic device (SkyLogic) based on skyrmions, which are magnetic vortex-like structures that have low depinning current density and are robust to defects. A charge current sent through a polarizer ferromagnet (P-FM)…
Nanotransistors typically operate in far-from-equilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. In carbonbased nanotransistors, source and drain contacts are often…
We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100…
The problem of Fermi-level pinning at semiconductor-metal contacts is readdressed starting from first-principles calculations for Al/GaAs. We give quantitative evidence that the Schottky barrier height is very little affected by any…
Learning and logic are fundamental brain functions that make the individual to adapt to the environment, and such functions are established in human brain by modulating ionic fluxes in synapses. Nanoscale ionic/electronic devices with…
The multiple ferroelectric polarization tuned by external electric field could be used to simulate the biological synaptic weight. Ferroelectric synaptic devices have two advantages compared with other reported ones: One is the intrinsic…
Much attention has been focused on the design of low barrier nanomagnets (LBM), whose magnetizations vary randomly in time owing to thermal noise, for use in binary stochastic neurons (BSN) which are hardware accelerators for machine…
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…
In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel…
Neuro-symbolic artificial intelligence (AI) excels at learning from noisy and generalized patterns, conducting logical inferences, and providing interpretable reasoning. Comprising a 'neuro' component for feature extraction and a 'symbolic'…
In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission…
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two terminal device…
In this letter, we quantify the impact of device limitations on the classification accuracy of an artificial neural network, where the synaptic weights are implemented in a Ferroelectric FET (FeFET) based in-memory processing architecture.…