Related papers: DRAM-Profiler: An Experimental DRAM RowHammer Vuln…

The RRAM-based neuromorphic computing system has amassed explosive interests for its superior data processing capability and energy efficiency than traditional architectures, and thus being widely used in many data-centric applications. The…

The rowhammer bug allows an attacker to gain privilege escalation or steal private data. A key requirement of all existing rowhammer attacks is that an attacker must have access to at least part of an exploitable hammer row. We refer to…

Vulnerabilities emanating from DRAM errors pose a vexing problem that remains, as of yet, unsolved and elusive but cannot be ignored. Prior defenses focused on specific details of early RowHammer attacks and fail to generalize with the…

As Dynamic Random Access Memories (DRAM) scale, they are becoming increasingly susceptible to Row Hammer. By rapidly activating rows of DRAM cells (aggressor rows), attackers can exploit inter-cell interference through Row Hammer to flip…

Per Row Activation Counting (PRAC) has emerged as a robust framework for mitigating RowHammer (RH) vulnerabilities in modern DRAM systems. However, we uncover a critical vulnerability: a timing channel introduced by the Alert Back-Off (ABO)…

We experimentally demonstrate the effects of read disturbance (RowHammer and RowPress) and uncover the inner workings of undocumented read disturbance defense mechanisms in High Bandwidth Memory (HBM). Detailed characterization of six real…

A decade after its academic introduction, RowHammer (RH) remains a moving target that continues to challenge both the industry and academia. With its potential to serve as a critical attack vector, the ever-decreasing RH threshold now…

A fundamental assumption in software security is that a memory location can only be modified by processes that may write to this memory location. However, a recent study has shown that parasitic effects in DRAM can change the content of a…

Low-power SRAM architectures are especially sensitive to many types of defects that may occur during manufacturing. Among these, resistive defects can appear. This paper analyzes some types of such defects that may impair the device…

Dynamic Random Access Memory (DRAM) is the de-facto choice for main memory devices due to its cost-effectiveness. It offers a larger capacity and higher bandwidth compared to SRAM but is slower than the latter. With each passing generation,…

This paper summarizes the SoftMC DRAM characterization infrastructure, which was published in HPCA 2017, and examines the work's significance and future potential. SoftMC (Soft Memory Controller) is the first publicly-available DRAM testing…

Dynamic Random Access Memory (DRAM) is the prevalent memory technology used to build main memory systems of almost all computers. A fundamental shortcoming of DRAM is the need to refresh memory cells to keep stored data intact. DRAM refresh…

Resistive random-access memory (RRAM) is widely recognized as a promising emerging hardware platform for deep neural networks (DNNs). Yet, due to manufacturing limitations, current RRAM devices are highly susceptible to hardware defects,…

Persistent Memory (PMEM), also known as Non-Volatile Memory (NVM), can deliver higher density and lower cost per bit when compared with DRAM. Its main drawback is that it is typically slower than DRAM. On the other hand, DRAM has…

Deep neural networks (DNNs) have been shown to tolerate "brain damage": cumulative changes to the network's parameters (e.g., pruning, numerical perturbations) typically result in a graceful degradation of classification accuracy. However,…

A precise vulnerability discovery model (VDM) will provide a useful insight to assess software security, and could be a good prediction instrument for both software vendors and users to understand security trends and plan ahead patching…

This paper investigates secure low-cost in-DRAM trackers for mitigating Rowhammer (RH). In-DRAM solutions have the advantage that they can solve the RH problem within the DRAM chip, without relying on other parts of the system. However,…

Since its public introduction in the mid-2010s, the Row Hammer (RH) phenomenon has drawn significant attention from the research community due to its security implications. Although many RH-protection schemes have been proposed by processor…

Processing-using-DRAM (PuD) is a promising paradigm for alleviating the data movement bottleneck using DRAM's massive internal parallelism and bandwidth to execute very wide operations. Performing a PuD operation involves activating…

The aggressive scaling of technology may have helped to meet the growing demand for higher memory capacity and density, but has also made DRAM cells more prone to errors. Such a reality triggered a lot of interest in modeling DRAM behavior…