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Related papers: Thermal boundary conductance and thermal conductiv…

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Efficient heat dissipation to the substrate is crucial for optimal device performance in nanoelectronics. We develop a theory of electronic thermal boundary conductance (TBC) mediated by remote phonon scattering for the single-layer…

Mesoscale and Nanoscale Physics · Physics 2020-09-28 Zhun-Yong Ong , Gang Zhang , Linyou Cao , Yong-Wei Zhang

We theoretically investigate thermal conductivity in silicon nanomeshes using Monte Carlo simulations of phonon transport. Silicon membranes of 100nm thickness with randomly located pores of 50nm diameter are considered. The effects of…

Materials Science · Physics 2014-06-02 Stefanie Wolf , Neophytos Neophytou , Hans Kosina

Features of thermal transport in multilayered porous silicon nanostructures are considered. Such nanostructures were fabricated by electrochemical etching of monocrystalline Si substrates by applying periodically changed current density.…

Nanostructuring on length scales corresponding to phonon mean free paths provides control over heat flow in semiconductors and makes it possible to engineer their thermal properties. However, the influence of boundaries limits the validity…

Interfacial thermal transport is a critical bottleneck in nanoscale systems, where heat dissipation and energy efficiency are strongly modulated by molecular ordering at solid-liquid boundaries. Here, using atomistic simulations of…

Mesoscale and Nanoscale Physics · Physics 2026-01-14 Viktor Mandrolko , Mykola Isaiev

Thermal transport across interfaces is an important issue for microelectronics, photonics, and thermoelectric devices and has been studied both experimentally and theoretically in the past. In this paper, thermal interface resistance (1/G)…

Materials Science · Physics 2015-01-28 Yingying Zhang , Xin Qian , Zhan Peng , Nuo Yang

This study investigates the mechanism of enhancing interfacial thermal transport performance in Silicon/Diamond (Si/Diamond) heterostructures using the phonon bridge. A heat transfer model for three-layer heterostructures is developed by…

Materials Science · Physics 2025-07-31 Ershuai Yin , Qiang Li , Wenzhu Luo , Lei Wang

Heat transfer is a critical aspect of modern electronics, and a deeper understanding of the underlying physics is essential for building faster, smaller, and more powerful devices with an improved performance and efficiency. In such…

Wide-bandgap (WBG) semiconductors have promising applications in power electronics due to their high voltages, radio frequencies, and tolerant temperatures. Among all the WBG semiconductors, SiC has attracted attention because of its high…

Materials Science · Physics 2024-01-18 Qinqin He , Yixin Xu , Haidong Wang , Zhigang Li , Yanguang Zhou

Thermal transport in high-electron-mobility-transistor (HEMT) structures grown on 4H-SiC substrates by metalorganic-vapour-phase epitaxy (MOCVD) is systematically investigated. The thermal conductivity of the GaN channel and AlN buffer…

Materials Science · Physics 2025-10-15 Dat Q. Tran , Minho Kim , Okhyun Nam , Vanya Darakchieva , Plamen P. Paskov

AlN-GaN heterostructures are central to high-power and high-frequency electronics, including RF devices, power converters, and AI accelerators. An intermediate Al1-xGaxN (AlGaN) layer is often present, either unintentionally during growth…

Materials Science · Physics 2026-01-21 Khalid Zobaid Adnan , Hao Zhou , Tianli Feng

Interfaces dominate heat conduction in nanostructured systems, and much work has focused on methods to enhance interfacial conduction. These approaches generally address planar interfaces, where the heat flux vector is everywhere normal to…

Mesoscale and Nanoscale Physics · Physics 2017-02-21 Woosung Park , Aditya Sood , Joonsuk Park , Mehdi Asheghi , Robert Sinclair , Kenneth E. Goodson

The effect of interface scattering on the performance of disordered, nanocomposite thermoelectric materials is studied theoretically using effective medium theory and direct numerics. The interfacial electronic and phonon scattering…

Mesoscale and Nanoscale Physics · Physics 2012-02-24 Paul M. Haney

We review experimental and theoretical results on thermal transport in semiconductor nanostructures (multilayer thin films, core/shell and segmented nanowires), single- and few-layer graphene, hexagonal boron nitride, molybdenum disulfide…

Mesoscale and Nanoscale Physics · Physics 2018-06-13 Alexandr I. Cocemasov , Calina I. Isacova , Denis L. Nika

Grain boundaries (GBs) strongly influence thermal transport in crystalline solids by disrupting lattice periodicity and scattering phonons. Due to the atomic-level disorder and structural complexity, a fundamental understanding of how…

Despite the ubiquity of applications of heat transport across nanoscale interfaces, including integrated circuits, thermoelectrics, and nanotheranostics, an accurate description of phonon transport in these systems remains elusive. Here we…

Mesoscale and Nanoscale Physics · Physics 2019-09-11 Georgios Varnavides , Adam S. Jermyn , Polina Anikeeva , Prineha Narang

Thermal boundary conductance (TBC) across metal diamond interfaces plays a critical role in the thermal management of future diamond based ultrawide bandgap semiconductor devices. Molecular dynamics is a sophisticated method to predict TBC…

Materials Science · Physics 2024-05-24 Khalid Zobaid Adnan , Mahesh R. Neupane , Tianli Feng

Varying the thermal boundary conductance at metal-dielectric interfaces is of great importance for highly integrated electronic structures such as electronic, thermoelectric and plasmonic devices where heat dissipation is dominated by…

Applied Physics · Physics 2020-12-08 S. M. Oommen , S. Pisana

While phonon topology in crystalline solids has been extensively studied, its influence on thermal transport-especially in nanostructures-remains elusive. Here, by combining first-principles-based machine learning potentials with the phonon…

Materials Science · Physics 2025-12-23 Zhe Su , Shuoran Song , Qi Wang , Jian-Hua Jiang

Silicides are used extensively in nano- and microdevices due to their low electrical resistivity, low contact resistance to silicon, and their process compatibility. In this work, the thermal interface conductance of TiSi$_2$, CoSi$_2$,…

Mesoscale and Nanoscale Physics · Physics 2017-03-01 Ning Ye , Joseph P Feser , Sridhar Sadasivam , Timothy S. Fisher , Tianshi Wang , Chaoying Ni , Anderson Janotti