Related papers: Chern Number Tunable Quantum Anomalous Hall Effect…
Recently, the quantum anomalous Hall effect (QAHE) has been theoretically proposed in compensated antiferromagnetic systems by using the magnetic topological insulator model [see arXiv:2404.13305 (2024)]. However, the related and systematic…
Although much effort has been made to explore quantum anomalous Hall effect (QAHE) in both theory and experiment, the QAHE systems with tunable Chern numbers are yet limited. Here, we theoretically propose that NiAsO$_3$ and PdSbO$_3$,…
Quantum anomalous Hall (QAH) effect provides dissipationless chiral channels for spin transport, expected as an outstanding candidate in future low-power quantum computation. The spin-splitting band structure is vital for obtaining QAH…
We study the possibility of realizing quantum anomalous Hall effect (QAHE) with tunable Chern number through doping magnetic elements in the multi-layer topological insulator film. We find that high Chern number QAHE phases exist in the…
We study the practicability of achieving quantum anomalous Hall (QAH) effect with field-tunable Chern number in a magnetically doped, topologically trivial insulating thin film. Specifically in a candidate material,…
The high Chern-number quantum anomalous Hall effect (QAHE) is significant and fascinating due to the presence of multiple dissipationless chiral edge states. Here, we predict that monolayer NiSbO3 possesses the Chern number C = 3, confirmed…
The quantum anomalous Hall (QAH) state is a two-dimensional topological insulating state that has quantized Hall resistance of h/Ce2 and vanishing longitudinal resistance under zero magnetic field, where C is called the Chern number. The…
Recently, antiferromagnetic (AF) materials have attracted rapid attention, because they are considered as outstanding candidates to replace the widely used ferromagnets in the next generation of spintronics. We propose a magnetoresistance…
The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and topological properties for building functional devices. Through systematic…
The quantum anomalous Hall effect (QAHE) hosts the dissipationless chiral edge states associated with the nonzero Chern number, providing potentially significant applications in future spintronics. The QAHE usually occurs in a…
Topological insulators lacking time-reversal symmetry can exhibit the quantum anomalous Hall effect. Odd-layer thick MnBi$_2$Te$_4$ is a promising platform due to its intrinsic magnetic nature, however, quantization is rarely observed in…
As one of paradigmatic phenomena in condensed matter physics, the quantum anomalous Hall effect (QAHE) in stoichiometric Chern insulators has drawn great interest for years. By using model Hamiltonian analysis and first-principle…
We investigate a new class of topological antiferromagnetic (AF) Chern insulators driven by electronic interactions in two-dimensional systems without inversion symmetry. Despite the absence of a net magnetization, AF Chern insulators…
Mechanical modulation of the lattice parameter can modify the electronic structure and manipulate the magnetic coupling of a material without introducing impurities. Inspired by success in pressure-controlled magnetism, we investigate the…
By constructing germanene (silicene, stanene)/$M$Bi$_2$Te$_4$ ($M$ = 3d-transition elements) heterostructures, we discovered and designed multimechanism quantum-anomalous-Hall (QAH) systems, including $\Gamma$-based QAH, $K$-$K'$-connected…
The search of new topological insulators that demonstrate the quantum anomalous Hall effect (QAHE) is a cutting-edge research topic in condensed matter physics and materials science. So far, the QAHE has been observed only in Cr-doped…
We investigate an effective model of proximity modified graphene (or symmetrylike materials) with broken time-reversal symmetry. We predict the appearance of quantum anomalous Hall phases by computing bulk band gap and Chern numbers for…
Over a long period of exploration, the successful observation of quantized version of anomalous Hall effect (AHE) in thin film of magnetically-doped topological insulator completed a quantum Hall trio---quantum Hall effect (QHE), quantum…
Based on DFT and Berry curvature calculations, we predict that quantum anomalous hall effect (QAHE) can be realized in two dimensional anti-ferromagnetic (AFM) NiRuCl6 with zero net magnetic moment. By tuning spin-orbits coupling (SOC), we…
The long-sought Chern insulators that manifest quantum anomalous Hall effect are typically considered to occur solely in ferromagnets. Here, we theoretically predict the realizability of Chern insulators in antiferromagnets, of which the…