Related papers: Domain wall migration-mediated ferroelectric switc…
We harness non-volatile, amorphous-crystalline transitions in the chalcogenide phase-change medium germanium antimony telluride (GST) to realize optically-switchable, all-dielectric metamaterials. Nanostructured, subwavelength-thickness…
We resolve the microscopic mechanism of polarization switching in wurtzite ferroelectric AlScN by integrating advanced thin-film fabrication, ferroelectric switching dynamics characterizations, high-resolution scanning transmission electron…
Room-temperature electrically-tuned coercivity and nonvolatile multi-states magnetization switching is crucial for next-generation low-power 2D spintronics. However, most methods have limited ability to adjust the coercivity of…
We study the Landau-Lifshitz model for the energy of multi-scale transition layers -- called "domain walls" -- in soft ferromagnetic films. Domain walls separate domains of constant magnetization vectors $m^\pm \in \mathbb{S}^2$ that differ…
Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small feature size. Electric fields, for example, can change the…
We present an analysis of edge domain walls in exchange-biased ferromagnetic films appearing as a result of a competition between the stray field at the film edges and the exchange bias field in the bulk. We introduce an effective…
We present a class of Rashba systems in hexagonal semiconducting compounds, where an electrical control over spin-orbital texture is provided by their bulk ferroelectricity. Our first-principles calculations reveal a number of such…
Germanium antimony telluride has been the most used and studied phase-change material for electronic memory due to its suitable crystallization temperature, amorphous to crystalline resistance contrast, and stability of the amorphous phase.…
Large Rashba effect efficiently tuned by an external electric field is highly desired for spintronic devices. Using first-principles calculations, we demonstrate that large Rashba splitting is locked at conduction band minimum in…
The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behavior of the two-dimensional electron system forming at the interface of SrTiO3-based oxide heterostructures. The occurrence of…
By realizing in thin films a tensile stress state, superconductivity of 13 K was introduced into FeTe, an non-superconducting parent compound of the iron pnictides and chalcogenides, with transition temperature higher than that of its…
The Rashba-Edelstein effect stems from the interaction between the electron's spin and its momentum induced by spin-orbit interaction at an interface or a surface. It was shown that the inverse Rashba-Edelstein effect can be used to convert…
Among the recent discoveries of domain wall functionalities, the observation of electrical conduction at ferroelectric domain walls in the multiferroic insulator BiFeO3 has opened exciting new possibilities. Here, we report evidence of…
The resistivity due to a domain wall in ferromagnetic metallic wire is calculated based on the linear response theory. The interaction between conduction electrons and the wall is expressed in terms of a classical gauge field which is…
We discuss a new mechanism which allows domain walls produced during the primordial electroweak phase transition. We show that the effective surface tension of these domain walls can be made vanishingly small due to a peculiar magnetic…
Developing new material platforms for use in superconductor-semiconductor hybrid structures is desirable due to limitations caused by intrinsic microwave losses present in commonly used III/V material systems. With the recent reports on…
Negative magnetoresistance in conventional two-dimensional electron gases is a well-known phenomenon, but its origin in complex and topological materials, especially those endowed with quantum geometry, remains largely elusive. Here, we…
Indium selenide (In2Se3), a ferroelectric semiconductor, offers a unique platform for multifunctional nanoelectronics owing to the interplay between polarization dynamics, interlayer sliding, and structural polymorphism. Ferroelectric…
We report first-principle atomistic simulations on the effect of local strain gradients on the nanoscale domain morphology of free-standing PbTiO$_3$ ultrathin films. First, the ferroelectric properties of free films at the atomic level are…
Current-induced magnetic domain wall motion, induced by transfer of spin transfer effect due to exchange interaction, is expected to be useful for next generation high-density storages. We here show that efficient domain wall manipulation…