Related papers: Si Superstrate Lenses on Patch-Antenna-Coupled Ter…
We have designed a plenoptic sensor to retrieve phase and amplitude changes resulting from a laser beam's propagation through atmospheric turbulence. Compared with the commonly restricted domain of (-pi, pi) in phase reconstruction by…
The hotspots, which are typically found in nanogaps between metal structures, are critical for the enhancement of the electromagnetic field. Surface-enhanced Raman scattering (SERS), a technique known for its exceptional sensitivity and…
We show that Si MOSFETs, AlGaN/GaN HEMTs, AlGaAs/InGaAs HEMTs, and p-diamond FETs with feature sizes ranging from 20 nm to 130 nm could operate at room temperature as THz spectrometers in the frequency range from 120 GHz to 9.3 THz with…
In the past decade, detection of THz radiation by plasma-wave-assisted frequency mixing in antenna-coupled field-effect transistors (TeraFETs) -- implemented in various semiconductor material systems (Si CMOS, GaN/AlGaN, GaAs/AlGaAs,…
Superconducting nanowire single photon detectors are rapidly emerging as a key infrared photon-counting technology. Two front-side-coupled silver dipole nanoantennas, simulated to have resonances at 1480 nm and 1525 nm, were fabricated in a…
We present a metamaterial-based terahertz (THz) sensor for thickness measurements of subwavelength-thin materials and refractometry of liquids and liquid mixtures. The sensor operates in reflection geometry and exploits the frequency shift…
We propose a design for a superconducting nonlinear interferometer operating at microwave frequencies which allows the measurement of the optical nonlinearity \eta, with a precision which scales better than the Heisenberg-like limit as…
An ultrabroadband upconversion device is demonstrated by direct tandem integration of a p-type GaAs/AlxGa1-xAs ratchet photodetector (RP) with a GaAs double heterojunction LED (DH-LED) using the molecular beam epitaxy (MBE). An…
Extreme field localization and giant field enhancement are often achieved by using plasmonic nanostructures and metamaterials such as strongly coupled silver nanoparticles.Dielectric particles and structures can focus light beyond the…
This is a brief overview of the main physical ideas for application of field effect transistors for generation and detection of TeraHertz radiation. Resonant frequencies of the two-dimensional plasma oscillations in FETs increase with the…
Phase modulation plays a crucial role in various terahertz applications, including biomedical imaging, high-rate communication, and radar detection. Existing terahertz phase shifters typically rely on tuning the resonant effect of…
The concept and analysis of a Terahertz (THz) frequency-reconfigurable antenna using graphene are presented. The antenna exploits dipole-like plasmonic resonances that can be frequency-tuned on large range via the electric field effect in a…
Heterosubstrates have been extensively studied as a method to improve the heat dissipation of Ga$_{2}$O$_{3}$ devices. In this simulation work, we propose a novel role for $p$-type available heterosubstrates, as a component of a reduced…
Superchannels leverage the flexibility of elastic optical networks and pave the way to higher capacity channels in space division multiplexing (SDM) networks. A superchannel consists of subchannels to which continuous spectral grid slots…
Detectors of high-frequency radiation based on high-electron-mobility transistors benefit from low noise, room-temperature operation, and the possibility to perform radiation spectroscopy using gate-tunable plasmon resonance. Despite…
We present a compact, noise-resilient reconstructive spectrometer-on-a-chip that achieves high-resolution hyperspectral imaging across an extended near-infrared (NIR) range up to 1100nm. The device integrates monolithically fabricated…
With the decreasing sizes of integrated-circuit components, the semiconductor industry is in growing need of high-throughput strain mapping techniques that offer high precision and spatial resolution, with desired industry goals of…
Recent advancements in silicon photonics are enabling the development of chip-scale photonics devices for sensing and signal processing applications, among which on-chip spectrometers are of particular interest for precision wavelength…
A non-uniform capacitance profile in the channel of a THz field-effect transistor (TeraFET) could significantly improve the THz detection performance. The analytical solutions and simulations of the hydrodynamic equations for the…
An array of DEPFET pixels is one of several concepts to implement an active pixel sensor. Similar to PNCCD and SDD detectors, the typically 0.45 mm thick silicon sensor is fully depleted by the principle of sideward depletion. They have…