Related papers: Overlapping Top Gate Electrodes based on Low Tempe…
We study ultracold collisions of ions with neutral atoms in traps. Recently, ultracold atom-ion systems are becoming available in experimental setups, where their quantum states can be coherently controlled. This allows for an…
Graphene electrodes provide a suitable alternative to metal contacts in molecular conduction nanojunctions. Here, we propose to use graphene electrodes as a platform for effective photon assisted tunneling through molecular conduction…
A vertical transistor based on a double gated, atomically thin heterojunction is theoretically examined. Both p-type and n-type transistor operations can be conveniently achieved by using one of the two gates as the switching gate. The…
We describe a hybrid laser-microwave scheme to implement two-qubit geometric phase gates in crystals of trapped ions. The proposed gates can attain errors below the fault-tolerance threshold in the presence of thermal, dephasing,…
We present a scheme for obtaining entangled photons and quantum phase gates in a room-temperature four-state tripod-type atomic system with two-mode active Raman gain (ARG). We analyze the linear and nonlinear optical response of this ARG…
Porous electrodes are an integral part of many electrochemical devices since they have high porosity to maximize electrochemical transport and high surface area to maximize activity. Traditional porous electrode materials are typically…
Realizing the topological bands of helical states poses a challenge in studying ultracold atomic gases. Motivated by the recent experimental success in realizing chiral optical ladders, here we present a scheme for synthesizing topological…
The modification of electronic band structures and the subsequent tuning of electrical, optical, and thermal material properties is a central theme in the engineering and fundamental understanding of solid-state systems. In this scenario,…
Parallel operations are important for both near-term quantum computers and larger-scale fault-tolerant machines because they reduce execution time and qubit idling. We propose and implement a pairwise-parallel gate scheme on a trapped-ion…
Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tunneling diodes were fabricated; room temperature…
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and…
Reports of emergent conductivity, superconductivity, and magnetism at oxide interfaces have helped to fuel intense interest in their rich physics and technological potential. Here we employ magnetic force microscopy to search for…
The studies of topological phases of matter have been extended from condensed matter physics to photonic systems, resulting in fascinating designs of robust photonic devices. Recently, higher-order topological insulators (HOTIs) have been…
Nanostructured electrodes with voids or interconnected pores accommodate large volume changes, shorten ion diffusion pathways, and enhance the structural reversibility of alloying electrodes. While these nanoporous features improve the…
We propose to use sub-wavelength confinement of light associated with the near field of plasmonic systems to create nanoscale optical lattices for ultracold atoms. Our approach combines the unique coherence properties of isolated atoms with…
We report a simple and reproducible method to fabricate two metallic electrodes made of different metals with a nanometer-sized gap. These electrodes are fabricated by defining a pair of gold electrodes lithographically and…
We present a systematic study of top-down processed GaN/AlN heterostructures for intersubband optoelectronic applications. Samples containing quantum well superlattices that display either near- or mid-infrared intersubband absorption were…
Semiconductor heterostructures have played a critical role as the enabler for new science and technology. The emergence of transition metal dichalcogenides (TMDs) as atomically thin semiconductors has opened new frontiers in semiconductor…
We discuss transport through double gated single and few layer graphene devices. This kind of device configuration has been used to investigate the modulation of the energy band structure through the application of an external perpendicular…
The problem of photonic phase transition for the system of a two-level atomic ensemble interacting with a quantized single-mode electromagnetic field in the presence of optical collisions (OC) is considered. We have shown that for large and…