Related papers: Precision measurements on Si-
In this paper we present the first high-resolution laser spectroscopy results obtained at the GISELE laser laboratory of the GANIL-SPIRAL2 facility, in preparation for the first experiments with the S$^3$-Low Energy Branch. Studies of…
Continuous solid electrolyte interface (SEI) formation remains the limiting factor of the lifetime of silicon nanoparticles (SiNPs) based negative electrodes. Methods that could provide clear diagnosis of the electrode degradation are of…
This study evaluates the radiation tolerance of a 4H-SiC PIN detector under X-ray irradiation up to \SI{2}{MGy} (Si) at \SI{160}{keV}. The detector features a fully epitaxial vertical PIN structure with mesa terminations and field plates.…
We present a computational study of the electronic properties of amorphous SiO2. The ionic configurations used are the ones generated by an earlier molecular dynamics simulations in which the system was cooled with different cooling rates…
Pieces of $n$-type silicon with 3.5 k$\Omega \cdot $cm resistivity have been irradiated by reactor neutrons to fluences of (1, 5 and 10) $\times 10^{16}$ cm$^{-2}$. Using light-transmission measurements, the absorption coefficients have…
Spins in silicon that are accessible via a telecom-compatible optical transition are a versatile platform for quantum information processing that can leverage the well-established silicon nanofabrication industry. Key to these applications…
Pulsed electron paramagnetic resonance spectroscopy of the photoexcited, metastable triplet state of the oxygen-vacancy center in silicon reveals that the lifetime of the ms = \pm1 sub-levels differ significantly from that of the ms =0…
We consider the spin-exchange (SE) cross section in electron scattering from $^3$He\,{\scriptsize II}, which drives the hyperfine-changing \hbox{3.46 cm} (8.665 GHz) line transition. Both the analytical quantum defect method --- applicable…
SiH has long been observed in the spectrum of our Sun and other cool stars. Computed line lists for the main isotopologues of silicon monohydride, $^{28}$SiH, $^{29}$SiH, $^{30}$SiH and $^{28}$SiD are presented. These line lists consider…
We study $\eta_{\rm c}$ production at center-of-mass energies $\sqrt{s}$ from 4.18 to 4.60 GeV in $e^+e^-$ annihilation data collected with the BESIII detector operating at the BEPCII storage ring, corresponding to 7.3 fb$^{-1}$ of…
A new instrument for spot profile analysis of electron diffraction - SPA-LEED - has been set up. The instrument works either with a transparent phosphor screen for visual inspection of the pattern or in its main mode with a channeltron for…
We report a precise measurement of the isotope shifts in the $4^2$S$_{1/2} \rightarrow 3^2$D$_{5/2}$ electric quadrupole transition at 729~nm in the $^{40 - 42,44,48}$Ca$^+$. The measurement has been made via high-resolution laser…
We report ac susceptibility and high-frequency electron spin resonance (ESR) measurements on the geometrically frustrated compound Ba$_3$NbFe$_3$Si$_2$O$_{14}$ with the N\'{e}el temperature $T_N=27 K$. An unusually large…
We present the first detection of electrons with kinetic energy in the 100 eV range with transition-edge sensors (TESs). This has been achieved with a $(100\times 100)$ $\mu$m$^2$ Ti-Au bilayer TES, with a critical temperature of about 84…
A comprehensive study of the physical parameters of active region fan loops is presented using the observations recorded with the Interface Region Imaging Spectrometer (IRIS), the EUV Imaging Spectrometer (EIS) on-board Hinode and the…
Electron microscopy prevalently uses energy-dispersive x-ray spectroscopy (EDS) and electron energy loss spectroscopy (EELS) for elemental analysis. EDS and EELS energy resolutions are commonly between 30-100 eV or 0.01-1 eV, respectively.…
Colour centres in diamond are attractive candidates for numerous quantum applications due to their good optical properties and long spin coherence times. They also provide access to the even longer coherence of hyperfine coupled nuclear…
We demonstrate a technique for continuous tuning of the Hanle effect from electromagnetically induced transparency (EIT) to electromagnetically induced absorption (EIA) by changing the polarization ellipticity of a control beam. In contrast…
The first direct measurement of the relative phase between the strong and electromagnetic amplitudes for a $J/\psi$ decaying into a vector-pseudoscalar final state is performed using 26 energy points of $e^+e^-$ annihilation data between…
A silicon carbide PIN detector was fabricated and its radiation tolerance under Ta heavy ion irradiation of 2370 MeV was evaluated. Its electrical properties, charge collection performance and time resolution of $\beta$-particles…