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Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing…
Appearance of strong spin-orbit coupling (SOC) is apparent in ternary equiatomic compounds with 5$d$-electrons due to the large atomic radii of transition metals. SOC plays a significant role in the emergence of unconventional…
Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging…
We demonstrate a new type of dual gate transistor to induce record electric fields through two-dimensional materials (2DMs). At the heart of this device is a 2DM suspended between two volumes of ionic liquid (IL) with independently…
To date, endeavors in nanoscale spintronics are dominated by the use of single-electron or single-spin transistors having at their heart a semiconductor, metallic or molecular quantum dot who's localized states are non-spin-degenerate and…
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon…
The device of electric double-layer transistor (EDLT) with ionic liquid has been employed as an effective way to dope carriers over a wide range, which can induce metallic state, magnetic reconstruction and superconducting transition.…
We show that the electric polarization at the interface with ultrathin superconducting (S) films sandwiched between ferroelectric (FE) layers allows achievement of substantially stronger modulation of inner carrier density and…
The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…
The presence of a direct band gap and an ultrathin form factor has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulphide (MoS2) being the most…
Hyperdoping with gallium (Ga) has been established as a route to observe superconductivity in silicon (Si). The relatively large critical temperatures (T$_{\rm c}$) and magnetic fields (B$_{\rm c}$) make this phase attractive for cryogenic…
Superconducting electronics represents a promising technology, offering not only efficient integration with quantum computing systems, but also the potential for significant power reduction in high-performance computing. Nonetheless, the…
Electrides, with excess anionic electrons confined in their empty space, are promising for uses in catalysis, nonlinear optics and spin-electronics. However, the application of electrides is limited by their high chemical reactivity with…
The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon…
Two-dimensionally confined electrons showing unusually large thermopower (S) have attracted attention as a potential approach for developing high performance thermoelectric materials. However, enhanced S has never been observed in electric…
The development of multifunctional devices calls for the discovery of new layered materials with novel electronic properties. f-electron systems naturally host a rich set of competing and intertwining phases owning to the presence of strong…
Manipulating the electrostatic double layer and tuning the conductance in nanofluidic systems at salt concentrations of 100 mM or higher has been a persistent challenge. The primary reasons are (i) the short electrostatic proximity length,…
With the recent experimental verification that ferroelectric lattice distortions survive in the metallic phase of some materials, there is a desire to create devices that are both switchable and take advantage of the novel functionalities…
Despite metals are believed to be insensitive to field-effect and conventional Bardeen-Cooper-Schrieffer (BCS) theories predict the electric field to be ineffective on conventional superconductors, a number of gating experiments showed the…
The operation of an integrated two-dimensional complementary metal-oxide-semiconductor inverter with well-matched input/output voltages is reported. The circuit combines a few-layer MoS2 n-MOSFET and a black phosphorus (BP) p-MOSFET…