Related papers: Electrical-controllable antiferromagnet-based tunn…
Magnetic tunnel junctions (MTJs) are basic building blocks for devices such as magnetic random access memories (MRAMs). The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of MTJs…
Collinear antiferromagnetic (AFM) materials have unique promise of no stray fields, display ultrafast dynamics, and being robust against perturbation filed which motivates the extensive research of antiferromagnetic spintronics. However,…
Antiferromagnets are promising materials for future spintronic applications due to their unique properties including zero stray fields, robustness versus external magnetic fields and ultrafast dynamics, which have attracted extensive…
Antiferromagnetic spintronics is an emerging research field whose focus is on the electrical and optical control of the antiferromagnetic order parameter and its utility in information technology devices. An example of recently discovered…
Intensive studies have been made on antiferromagnets as candidate materials for next generation memory bits due to their ultrafast dynamics reaching picosecond time scales. Recent demonstrations of electrical bidirectional switching of…
Altermagnets demonstrate significant potential in spintronics due to their unique non-relativistic spin-splitting properties, yet altermagnetic devices still face challenges in efficiently switching logic states. Here, we report…
Electric currents carrying a net spin polarization are widely used in spintronics, whereas globally spin-neutral currents are expected to play no role in spin-dependent phenomena. Here we show that, in contrast to this common expectation,…
The role of universal memory can be successfully satisfied by magnetic tunnel junctions (MTJs) where the writing mechanism is based on spin-transfer torque (STT). An improvement in the switching properties (lower switching current density…
Magnetic tunnel junctions (MTJs) are key components of spintronic devices, such as magnetic random-access memories. Normally, MTJs consist of two ferromagnetic (FM) electrodes separated by an insulating barrier layer. Their key functional…
Superparamagnetic tunnel junctions (sMTJs) are emerging as promising components for stochastic units in neuromorphic computing, owing to their tunable random switching behavior. Conventional MTJ control methods, such as spin-transfer torque…
An electrical current can transfer spin angular momentum to a ferromagnet. This novel physical phenomenon, called spin transfer, offers unprecedented spatial and temporal control over the magnetic state of a ferromagnet and has tremendous…
Using an electric field instead of an electric current (or a magnetic field) to tailor the electronic properties of magnetic materials is promising for realizing ultralow energy-consuming memory devices because of the suppression of Joule…
Emerging altermagnetic materials with vanishing net magnetizations and unique band structures have been envisioned as an ideal electrode to design antiferromagnetic tunnel junctions. Their momentum-resolved spin splitting in band structures…
We propose a new type of multi-bit and energy-efficient magnetic memory based on current-driven, field-free, and highly controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the…
We study spin-dependent electron transport through a ferromagnetic-antiferromagnetic-normal metal tunneling junction subject to a voltage or temperature bias, in the absence of spin-orbit coupling. We derive microscopic formulas for various…
We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools…
Antiferromagnetic Tunnel Junctions (AFMTJs) offer picosecond switching and high integration density for in-memory computing, but their ultrafast dynamics and low tunnel magnetoresistance (TMR) make state-of-the-art MRAM interfaces…
This paper reports our Monte Carlo (MC) studies aiming to explain the experimentally observed paramagnetic molecule induced antiferromagnetic coupling between the ferromagnetic (FM) electrodes. Recently developed magnetic tunnel junction…
Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a…
Highly efficient information processing in brain is based on processing and memory components called synapses, whose output is dependent on the history of the signals passed through them. Here we have developed an artificial synapse with…