Related papers: Highly Reproducible and CMOS-compatible VO2-based …
The metal-insulator transition (MIT) observed in vanadium dioxide (VO2) has been a topic of great research interest for past decades, with the underlying physics yet not fully understood due to the complex electron interactions and…
Manipulating the strain induced poly-domains and phase transition in correlated oxide material are important for high performance devices fabrication. Though the electronic transport in the strained oxide film at macroscopic scales can be…
Neuromorphic functionalities in memristive devices are commonly associated with the ability to electrically create local conductive pathways by resistive switching. The archetypal correlated material, VO2, has been intensively studied for…
Vanadium dioxide, VO2, and its metal-insulator transition at T=340K continues to receive considerable interest. The question whether the physics of the insulating low-temperature phase is dominated by the Mott or the Peierls scenario, i.e.…
Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical…
Silicon photonics arises as a viable solution to address the stringent resource demands of emergent technologies, such as neural networks. Within this framework, photonic memories are fundamental building blocks of photonic integrated…
Vanadium dioxide is of broad interest as a spin-1/2 electron system that realizes a metal-insulator transition near room temperature, due to a combination of strongly correlated and itinerant electron physics. Here, resonant inelastic X-ray…
Insulator-to-metal transition materials are highly sensitive to even minute deviations of stoichiometry, lattice defects, and disorder, which provides opportunities to engineer their electrical switching characteristics. Using V2O3 as a…
This paper presents a VO2-based metamaterial absorber optimized for ultra-broadband, polarization-insensitive performance in the terahertz (THz) frequency range. The absorber consists of a patterned VO2 metasurface, a low-loss MF2…
We conceptualized three-array scalable metasurfaces comprising only three thin strip grids and numerically demonstrated their characteristics in the mid-infrared spectral regime for switchable polarization manipulation and related…
Impedance spectroscopy measurements were performed in high quality Vanadium dioxide (VO2) thin films. This technique allows us investigate the resistive and capacitive contribution to the dielectric response near the metal-insulator…
Controlling the insulator-metal transition (IMT) in correlated oxide system through oxygen vacancy ordering opens up a new paradigm for exploring exotic structural transformation and physical functionality. Oxygen vacancy serves as a…
Amorphous VO$_x$ films without a hysteretic phase transition are stable with respect to thermal cycling and highly demanded as sensitive elements of the resistive thermometers and microbolometers. In this paper we present simple and…
Metal-oxide-metal devices based on amorphous VOx are shown to exhibit one of two distinct negative differential resistance (NDR) characteristics depending on the maximum current employed for electroforming. For low compliance currents they…
With the broad recent research on ferroelectric hafnium oxide for non-volatile memory technology, depolarization effects in HfO2-based ferroelectric devices gained a lot of interest. Understanding the physical mechanisms regulating the…
Traditional electronic devices are well-known to improve in speed and energy-efficiency as their dimensions are reduced to the nanoscale. However, this scaling behavior remains unclear for nonlinear dynamical circuit elements, such as Mott…
Dynamic radiative cooling with variable emissive power is experimentally demonstrated in this study by a wavelength-selective tunable metafilm emitter, which consists of an opaque aluminum film, a sputtered silicon spacer, and a…
This article proposes a concept for dynamically reconfigurable distributed microwave circuits by leveraging the abrupt conductivity transition in phase-change materials (PCM). Metallic surface-inclusions (<<$\lambda$) are embedded in the…
Heavy computational demands from artificial intelligence (AI) leads the research community to explore the design space for functional materials that can be used for high performance memory and neuromorphic computing hardware. Novel device…
We report strongly thermochromic YSZ/V0.855W0.018Sr0.127O2/SiO2 coatings, where YSZ is Y stabilized ZrO2, prepared using a scalable deposition technique on standard glass at a low substrate temperature of 320 {\deg}C and without any…