Related papers: Two-photon absorption in silicon using real densit…
We calculate the binding energy, transition energies, oscillator strength, and absorption coefficient of indirect excitons in transition metal dichalcogenide (TMDC) double layers separated by an integer number of hexagonal boron nitride…
Tho-photon absorption holds potential for many practical applications. We theoretically investigate the onset of this phenomenon in a semiconductor quantum dot -- metallic nanoshell composite subjected to a resonant CW excitation.…
Because of its low-cost, silicon is the standard material for photovoltaic conversion. Yet, its band-edge absorption spectrum is narrower than the spectrum of the solar radiation, which reduces its conversion efficiency. In this paper, it…
The optical nonlinearity of WS2, MoS2 monolayer and few-layer films was investigated using the Z-scan technique with femtosecond pulses from the visible to the near infrared. The dependence of nonlinear absorption of the WS2 and MoS2 films…
Non-degenerate two-photon absorption (TPA) is investigated in a nanophotonic silicon waveguide in a configuration such that the dispersion of the nonlinear absorption and refraction cannot be neglected. It is shown that a signal wave can…
We report a numerical calculation of the two-photon absorption coefficient of electrons in a binding potential using the real-time real-space higher-order difference method. By introducing random vector averaging for the intermediate state,…
Optical absorption is one of fundamental light-matter interactions. In most materials, optical absorption is a weak perturbation to the light. In this regime, absorption and emission are irreversible, incoherent processes due to strong…
The simplest approach to deal with light excitations in direct-gap semiconductors is to model them as a two-band system: one conduction and one valence band. For such models, particularly simple analytical expressions are known to exist for…
The strength of light-matter interaction is of central importance in photonics and optoelectronics. For many widely studied two-dimensional semiconductors, such as MoS2, the optical absorption due to exciton resonances increases with…
Atomically thin two-dimensional (2D) semiconductors are extensively investigated for opto-electronic applications that require strong light-matter interactions. In view of such applications, it is essential to understand how…
Silicon photonics provides a versatile platform for large-scale integration of optical functions, but its weak intrinsic nonlinear response limits the realization of active, intensity-dependent functionalities. Hybrid integration of…
Encapsulation layers are explored for passivating the surfaces of silicon to reduce optical absorption in the 1500-nm wavelength band. Surface-sensitive test structures consisting of microdisk resonators are fabricated for this purpose.…
Light absorption at the boundary of indirect-band-gap and direct-forbidden gap semiconductors is analyzed. It is found that the possibility of the electron momentum nonconservation at the interface leads to essential enhancement of…
Silicon photodetectors operating at near-infrared wavelengths with high-speed and high sensitivity are becoming critical for emerging applications, such as Light Detection and Ranging Systems (LIDAR), quantum communications, and medical…
Applying the novel exact-exchange (EXX) Kohn-Sham method within time-dependent density-functional theory, we obtained the optical absorption spectrum of bulk silicon in good agreement with experiments including excitonic features. Analysis…
We present a theoretical analysis of two-photon absorption of classical and squeezed light valid when one-photon absorption to an intermediate state is either resonant or far-detuned from resonance, and in both the low and high intensity…
Wide bandgap semiconductors are widely used in photonic technologies due to their advantageous features, such as large optical bandgap, low losses, and fast operational speeds. Silicon carbide is a prototypical wide bandgap semiconductor…
Semiconductors are by now well-established targets for direct detection of MeV to GeV dark matter via scattering off electrons. We show that semiconductor targets can also detect significantly lighter dark matter via an absorption process.…
The absorption of large bipolarons is investigated using the path-integral method. The response of a bipolaron to an external electromagnetic field is derived in the framework of the memory-function approach. The bipolaron optical…
The use of cryogenic silicon as a detector medium for dark matter searches is gaining popularity. Many of these searches are highly dependent on the value of the photoelectric absorption cross section of silicon at low temperatures,…