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The quantum spin Hall edge is predicted to reliably produce Majorana zero modes on the border between magnetic insulator- and superconductor-proximitized regions of the edge. The direction of magnetization determines the size of the induced…

Mesoscale and Nanoscale Physics · Physics 2020-11-11 Dmitry I. Pikulin

Hybrid semiconductor-superconductor qubits have recently emerged as a promising alternative to traditional platforms, combining material advantages with device-level tunability. A defining feature is their gate-tunable Josephson coupling,…

We have measured the low-frequency time instability known as charge offset drift of Si/SiO$_2$ single electron devices (SEDs) with and without an overall poly-Si top gate. We find that SEDs with a poly-Si top gate have significantly less…

Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework…

Mesoscale and Nanoscale Physics · Physics 2013-12-09 Teck Seng Koh , S. N. Coppersmith , Mark Friesen

Decoherence due to charge noise is one of the central challenges in using spin qubits in semiconductor quantum dots as a platform for quantum information processing. Recently, it has been experimentally demonstrated in both Si and GaAs…

Mesoscale and Nanoscale Physics · Physics 2017-05-30 Chengxian Zhang , Robert E. Throckmorton , Xu-Chen Yang , Xin Wang , Edwin Barnes , S. Das Sarma

In superconductivity, electrons exhibit unique macroscopic collective quantum behavior that is the key for many modern quantum technologies. This electron behavior stems vastly from coupling to a correlated motion of atoms in the material,…

Superconductivity · Physics 2020-03-20 Mohammad Suleiman , Emanuele G. Dalla Torre , Yachin Ivry

Gate-defined semiconductor quantum dots require an appropriate number of electrons to function as qubits. The number of electrons is usually tuned by analyzing charge stability diagrams, in which charge transitions manifest as edges.…

Mesoscale and Nanoscale Physics · Physics 2025-08-13 Fabian Hader , Fabian Fuchs , Sarah Fleitmann , Karin Havemann , Benedikt Scherer , Jan Vogelbruch , Lotte Geck , Stefan van Waasen

Spin defects in silicon carbide have exceptional electron spin coherence with a near-infrared spin-photon interface in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we successfully integrate highly…

Identifying, quantifying, and suppressing decoherence mechanisms in qubits are important steps towards the goal of engineering a quantum computer or simulator. Superconducting circuits offer flexibility in qubit design; however, their…

Silicon-based quantum computing has the potential advantages of low cost, high integration density, and compatibility with CMOS technologies. The detuning mechanism has been used to experimentally achieve silicon two-qubit quantum gates and…

Mesoscale and Nanoscale Physics · Physics 2019-05-31 Tong Wu , Jing Guo

Semiconductor spin qubits are an attractive quantum computing platform that offers long qubit coherence times and compatibility with existing semiconductor fabrication technology for scale up. Here, we propose a spin-qubit architecture…

We study the influence of the environment on an optically induced rotation of a single electron spin in a charged semiconductor quantum dot. We analyze the decoherence mechanisms resulting from the dynamical lattice response to the charge…

Mesoscale and Nanoscale Physics · Physics 2009-04-27 A. Grodecka , C. Weber , P. Machnikowski , A. Knorr

Current memcapacitor implementations typically demand complex fabrication processes or depend on organic materials exhibiting poor environmental stability and reproducibility. Here, we demonstrate memcapacitor structures utilizing a quasi…

Singlet-triplet spin qubits in six-electron double quantum dots, in moderate magnetic fields, can show superior immunity to charge noise. This immunity results from the symmetry of orbitals in the second energy shell of circular quantum…

Mesoscale and Nanoscale Physics · Physics 2014-08-06 Sebastian Mehl , David P. DiVincenzo

Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking an atomistic approach including critical effects of…

Mesoscale and Nanoscale Physics · Physics 2015-06-29 Muhammad Usman , Charles D. Hill , Rajib Rahman , Gerhard Klimeck , Michelle Y. Simmons , Sven Rogge , Lloyd C. L. Hollenberg

Spin-phonon interactions are one of the mechanisms limiting the lifetime of spin qubits made in semiconductor quantum dots. At variance with other mechanisms such as charge noise, phonons are intrinsic to the device and can hardly be…

Mesoscale and Nanoscale Physics · Physics 2020-08-19 Jing Li , Benjamin Venitucci , Yann-Michel Niquet

High-purity germanium (Ge) has re-emerged as a versatile semiconductor platform for spin-based quantum information processing because it combines mature materials processing, access to spin-free isotopes, high mobilities, small effective…

Quantum Physics · Physics 2026-05-14 D. -M. Mei , K. -M. Dong , S. A. Panamaldeniya , A. Prem , S. Chhetri , N. Budhathoki , S. Bhattarai

Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction which…

A key virtue of spin qubits is their sub-micron footprint, enabling a single silicon chip to host the millions of qubits required to execute useful quantum algorithms with error correction. With each physical qubit needing multiple control…

Most quantum compiler transformations and qubit allocation techniques to date are either peep-hole focused or rely on sliding windows that depend on a number of external parameters. Thus, global optimization criteria are still lacking. In…

Quantum Physics · Physics 2020-10-26 Martin Kong
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