Related papers: CoMeT: Count-Min-Sketch-based Row Tracking to Miti…

RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in other physically nearby DRAM rows. RowHammer solutions perform preventive actions (e.g.,…

We introduce ABACuS, a new low-cost hardware-counter-based RowHammer mitigation technique that performance-, energy-, and area-efficiently scales with worsening RowHammer vulnerability. We observe that both benign workloads and RowHammer…

This paper investigates secure low-cost in-DRAM trackers for mitigating Rowhammer (RH). In-DRAM solutions have the advantage that they can solve the RH problem within the DRAM chip, without relying on other parts of the system. However,…

The quadratic complexity and indefinitely growing key-value (KV) cache of standard Transformers pose a major barrier to long-context processing. To overcome this, we introduce the Collaborative Memory Transformer (CoMeT), a novel…

RowHammer vulnerabilities pose a significant threat to modern DRAM-based systems, where rapid activation of DRAM rows can induce bit-flips in neighboring rows. To mitigate this, state-of-the-art host-side RowHammer mitigations typically…

This paper provides the fundamental mechanisms of two types of row activation-induced bit flips and proposes in-DRAM protection techniques. RowBleed occurs when a victim row experiences charge leakage due to transistor's threshold voltage…

Rowhammer is a well-studied DRAM phenomenon wherein multiple activations to a given row can cause bit flips in adjacent rows. Many mitigation techniques have been introduced to address Rowhammer, with some support being incorporated into…

DRAM scaling has exacerbated the RowHammer vulnerability. To counter this, JEDEC recently introduced Per Row Activation Counting (PRAC) with the Alert Back-Off protocol as an optional DDR5 feature. While promising, PRAC requires per-row…

RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in physically nearby DRAM rows (victim rows). To ensure robust DRAM operation, state-of-the-art…

The security vulnerabilities due to Rowhammer have worsened over the last decade, with existing in-DRAM solutions, such as TRR, getting broken with simple patterns. In response, the DDR5 specifications have been extended to support Per-Row…

The Rowhammer vulnerability continues to get worse, with the Rowhammer Threshold (TRH) reducing from 139K activations to 4.8K activations over the last decade. Typical Rowhammer mitigations rely on tracking aggressor rows. The number of…

Processing cores and the accompanying main memory working in tandem enable the modern processors. Dissipating heat produced from computation, memory access remains a significant problem for processors. Therefore, processor thermal…

JEDEC has introduced the Per Row Activation Counting (PRAC) framework for DDR5 and future DRAMs to enable precise counting of DRAM row activations using per-row activation counts. While recent PRAC implementations enable holistic mitigation…

High access frequency of certain rows in the DRAM may cause data loss in cells of physically adjacent rows due to crosstalk. The malicious exploit of this crosstalk by repeatedly accessing a row to induce this effect is known as row…

The Rowhammer vulnerability poses an increasing challenge with newer generations of DRAM and aggressive technology scaling. Existing mitigation techniques, such as Graphene, Twice, and Hydra, primarily rely on tracking activation counts for…

Multi-object tracking (MOT) at low frame rates can reduce computational, storage and power overhead to better meet the constraints of edge devices. Many existing MOT methods suffer from significant performance degradation in low-frame-rate…

RowHammer attacks are a growing security and reliability concern for DRAMs and computer systems as they can induce many bit errors that overwhelm error detection and correction capabilities. System-level solutions are needed as process…

In order to shed more light on how RowHammer affects modern and future devices at the circuit-level, we first present an experimental characterization of RowHammer on 1580 DRAM chips (408x DDR3, 652x DDR4, and 520x LPDDR4) from 300 DRAM…

This dissertation rigorously characterizes many modern commodity DRAM devices and shows that by exploiting DRAM access timing margins within manufacturer-recommended DRAM timing specifications, we can significantly improve system…

JEDEC has introduced the Per Row Activation Counting (PRAC) framework for DDR5 and future DRAMs to enable precise counting of DRAM row activations. PRAC enables a holistic mitigation of Rowhammer attacks even at ultra-low Rowhammer…