Related papers: Exploring Charge Transport Dynamics in a Cryogenic…
This study investigates new technology for enhancing the sensitivity of low-mass dark matter detection by analyzing charge transport in a p-type germanium detector at 5.2 K. To achieve low-threshold detectors, precise calculations of the…
We investigated charge transport in an n-type germanium detector at 5.2 K to explore new technology for enhancing low-mass dark matter detection sensitivity. Calculations of dipole and cluster dipole state binding energies and electric…
By studying charge trapping in germanium (Ge) detectors operating at temperatures below 10 K, we demonstrate for the first time that the formation of cluster dipole states from residual impurities is responsible for charge trapping. Two…
The direct detection of MeV-scale dark matter (DM) particles hinges on achieving an exceptionally low energy detection threshold. Germanium (Ge) detectors, meticulously tailored with precise impurity compositions, hold the potential to…
A model of the Li-diffused inactive layer in P-type high purity germanium detectors is built to describe the transportation of charge carriers and calculate the charge collection efficiency therein. The model is applied to calculate charge…
For the first time, time-dependent internal charge amplification through impact ionization has been observed in a planar germanium (Ge) detector operated at cryogenic temperature. In a time period of 30 and 45 minutes after applying a bias…
P-type point contact (PPC) high-purity germanium detectors are an important technology in astroparticle and nuclear physics due to their superb energy resolution, low noise, and pulse shape discrimination capabilities. Analysis of data from…
Charge trapping degrades the energy resolution of germanium (Ge) detectors, which require to have increased experimental sensitivity in searching for dark matter and neutrinoless double-beta decay. We investigate the charge trapping…
The detection of low-energy deposition in the range of sub-eV through ionization using germanium (Ge) with a bandgap of $\sim$0.7 eV requires internal amplification of charge signal. This can be achieved through high electric field which…
The exploration of germanium (Ge) detectors with amorphous Ge (a-Ge) contacts has drawn attention to the searches for rare-event physics such as dark matter and neutrinoless double-beta decay. The charge barrier height (CBH) of the a-Ge…
A study of signals originating near the lithium-diffused n+ contact of p-type point contact (PPC) high purity germanium detectors (HPGe) is presented. The transition region between the active germanium and the fully dead layer of the n+…
Excited electrons in the conduction band of germanium collect into four energy minima, or valleys, in momentum space. These local minima have highly anisotropic mass tensors which cause the electrons to travel in directions which are…
The aim of the SELENDIS project within the EDELWEISS collaboration is to observe single $e^- h^+$ pairs in lightweight (3.3 g) cryogenic germanium bolometers with charge and phonon readout at biases up to $\sim 100$ V. These devices are…
We present a detailed study of the charge transport, optical reflectivity, and thermal transport properties of n-type PbSe crystals. A strong scattering, mobility-limiting mechanism was revealed to be at play at temperatures above 500 K.…
Formation of p+ contact on Germanium is important for applications in diode detector and other electronic devices. In this work, thermally deposited Al on Ge crystal is annealed at 350oC followed by slow cooling for solid-state regrowth of…
Internal charge amplification (ICA) in cryogenic high-purity germanium (HPGe) can lower detection thresholds by providing gain inside the detector crystal, but reliable operation requires a predictive estimate of the avalanche-onset…
Light, MeV-scale dark matter (DM) is an exciting DM candidate that is undetectable by current experiments. A germanium (Ge) detector utilizing internal charge amplification for the charge carriers created by the ionization of impurities is…
Phase change materials can be reversibly switched between amorphous and crystalline states and often show strong contrast in the optical and electrical properties of these two phases. They are now in widespread use for optical data storage,…
Charge trapping in germanium detectors will inevitably impact their excellent spectral performance. Disordered regions in the germanium crystal structure, either created in the material during processing or induced by radiation exposure,…
Electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are…