Related papers: Valley relaxation in a single-electron bilayer gra…
Flat bands emerging in buckled monolayer graphene superlattices have been recently shown to realize correlated states analogous to those observed in twisted graphene multilayers. Here, we demonstrate the emergence of valley topology driven…
Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum…
We derive the angular generation density of photoexcited carriers in gapless and gapped Bernal bilayer graphene. Exploiting the strong anisotropy of the band structure of bilayer graphene at low energies due to trigonal warping, we show…
Multivalley spin relaxation in $n$-type bulk GaAs in the presence of high electric field is investigated from the microscopic kinetic spin Bloch equation approach with the $\Gamma$ and $L$ valleys included. We show that the spin relaxation…
In this paper we investigate the electron-phonon coupling in bilayer graphene, as a paradigmatic case for multilayer graphenes where interlayer hoppings are relevant. Using a frozen-phonon approach within the context of Density Functional…
Multi-valley spin relaxation in $n$-type GaAs quantum wells with in-plane electric field is investigated at high temperature by means of kinetic spin Bloch equation approach. The spin relaxation time first increases and then decreases with…
Because the valleys in the band structure of graphene are related by time-reversal symmetry, electrons from one valley are reflected as holes from the other valley at the junction with a superconductor. We show how this Andreev reflection…
We develop an analytic theory to describe the interaction between electrons and K-phonons and study its influence on superconductivity in the bare bands of twisted bilayer graphene (TBG). We find that, due to symmetry and the two-center…
In this paper we report a relaxation-induced suppression of the noise for a single level quantum dot coupled to an oscillator with incoherent dynamics in the sequential tunneling regime. It is shown that relaxation induces qualitative…
The relaxation time of a single-electron spin is an important parameter for solid-state spin qubits, as it directly limits the lifetime of the encoded information. Thanks to the low spin-orbit interaction and low hyperfine coupling,…
Spin transitions driven by a periodically varying electric potential in dilute fluorinated graphene quantum dots are investigated. Flakes of monolayer graphene are considered as well as electrostatic electron traps induced in bilayer…
Gate control of donor electrons near interfaces is a generic ingredient of donor-based quantum computing. Here, we address the question: how is the phonon-assisted qubit relaxation time $T_1$ affected as the electron is shuttled between the…
We study theoretically the magic-angle twisted bilayer graphene with proximity-induced Ising and Rashba spin-orbit couplings on the top layer. Topological flat bands (with three distinct phases) are generically realized by the spin-orbit…
Although single-layer transition-metal dichalcogenides with novel valley functionalities are promising candidate to realize valleytronic devices, the essential understanding of valley depolarization mechanisms is still incomplete. Based on…
We study the hybrid excitations due to the coupling between surface optical phonons of a polar insulator substrate and plasmons in the valley-spin-polarized metal phase of silicene under an exchange field. We perform the calculations within…
Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can…
We study transport in twisted bilayer graphene and show that electrostatic barriers can act as valley splitters, where electrons from the $K$ ($K'$) valley are transmitted only to e.g.\ the top (bottom) layer, leading to valley-layer locked…
The magnetic field dependence of energy levels in gapped single- and bilayer graphene quantum dots (QDs) defined by electrostatic gates is studied analytically in terms of the Dirac equation. Due to the absence of sharp edges in these types…
Achieving a population imbalance between the two inequivalent valleys is a critical first step for any valleytronic device. A valley-polarization can be induced in biased bilayer graphene using circularly polarized light. In this paper, we…
The coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dichalcogenides have emerged as an outstanding platform for…