Related papers: Linear Magnetoresistance from Glassy Orders
Strange metals exhibit a variety of anomalous magnetotransport properties, the most striking of which is a resistivity that increases linearly with magnetic field $B$ over a broad temperature and field range. The ubiquity of this behavior…
A central puzzle in strongly correlated electronic phases is strange metallic transport, marked by $T$-linear resistivity and $B$-linear magnetoresistance, in sharp contrast with quadratic scalings observed in conventional metals. Here, we…
Linear magnetoresistance occurs in semiconductors as a consequence of strong electrical disorder and is characterized by nonsaturating magnetoresistance that is proportional to the applied magnetic field. By investigating a disordered…
The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects [1], unusual topological band structures [2],…
Linear magnetoresistance (LMR) is a widespread phenomenon observed in a host of quantum materials ranging from semiconductor nanostructures to quantum critical and strange metals. While multiple scenarios to explain LMR have been proposed,…
Anisotropic magnetoresistance (AMR) arises from symmetry lowering of the conductivity tensor induced by magnetic order. In simple ferromagnets, AMR is a relativistic effect, relying on spin-orbit interaction (SOC). Here, we demonstrate that…
Linear magnetoresistance (LMR) is of particular interest for memory, electronics, and sensing applications, especially when it does not saturate over a wide range of magnetic fields. One of its principal origins is local mobility or density…
Linear magnetoresistance is a phenomenon that has been observed in a few topological compounds that originate from classical and quantum phenomena. Here, we performed electrical transport measurements, in zero and applied magnetic fields,…
A magnetoresistance (MR) anomaly at low temperatures has been observed in a variety of systems, ranging from low-dimensional chalcogenides to spin and charge density wave (SDW/CDW) metals and, most recently, topological semimetals. In some…
A new mechanism of bi-linear magnetoresistance (BMR) is studied theoretically within the minimal model describing surface electronic states in topological insulators (TIs). The BMR appears as a consequence of the second-order response to…
Many of the most interesting and technologically important electronic materials discovered in the past two decades have two common features: a layered crystal structure and strong interactions between electrons. Two of the most fundamental…
The interlayer magnetoresistance of layered metals in a tilted magnetic field is calculated for two distinct models for the interlayer transport. The first model involves coherent interlayer transport and makes use of results of…
We have investigated the magnetoresistive behavior of Dirac semi-metal Cd3As2 down to low temperatures and in high magnetic fields. A positive and linear magnetoresistance (LMR) as large as 3100% is observed in a magnetic field of 14 T, on…
The discovery of the unusual magnetoresistance (UMR) during the rotation of magnetization in the plane perpendicular to the electric current, which has been typically attributed to magnetization-dependent interfacial reflection of spin…
Layered van der Waals crystals of topologically non-trivial and trivial semimetals with antiferromagnetic (AFM) ordering of magnetic sublattice are known to exhibit a negative magnetoresistance that is well correlated with AFM magnetization…
The general expression for the magnetoresistance (MR) due to the Lorentz force is derived by using the Fermi liquid transport theory based on the Kubo formula. The obtained gauge-invariant expression is exact for any strength of the…
Layered material $\beta$-IrSn$_4$ ($I4_1/acd$, $D^{20}_{4h}$, #142), whose electron bands have symmetry-enforced Dirac points, was investigated using high-quality single crystals. It exhibits a pronounced linear field-dependence of…
The change of a material's electrical resistance (R) in response to an external magnetic field (B) provides subtle information for the characterization of its electronic properties and has found applications in sensor and storage related…
Some single-crystalline materials present an electrical resistivity which decreases between room temperature and low temperatures at zero magnetic field as in a good metal and switches to a nearly semiconductinglike behavior at low…
Anisotropic magnetoresistance (AMR) and related planar Hall resistance (PHR) are ubiquitous phenomena of magnetic materials. Although the universal angular dependences of AMR and PHR in magnetic polycrystalline materials with one order…