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We present superconducting nanowire single-photon detectors (SNSPDs) based on few-layer NbSe$_2$ fully encapsulated with hexagonal boron nitride (hBN), demonstrating single-photon sensitivity. Our fabrication process preserves the…
InSe, a newly rediscovered two-dimensional (2D) semiconductor, possesses superior electrical and optical properties as a direct bandgap semiconductor with high mobility from bulk to atomically thin layers, drastically different from…
Increasing the efficiency and reducing the footprint of on-chip photodetectors enables dense optical interconnects for emerging computational and sensing applications. Avalanche photodetectors (APD) are currently the dominating on-chip…
We present an approach to increase the effective light-receiving area of superconducting nanowire single-photon detectors (SNSPD) by means of free-form microlenses that are printed in situ on top of the sensitive detector area using…
In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Excitation power dependence on integrated intensity from the…
The ability to resolve photon numbers is crucial in quantum information science and technology, driving the development of detectors with intrinsic photon-number resolving (PNR) capabilities. Although transition edge sensors represent the…
We present the results of the characterization of silicon pixel modules employing n-in-p planar sensors with an active thickness of 150 $\mathrm{\mu}$m, produced at MPP/HLL, and 100-200 $\mathrm{\mu}$m thin active edge sensor devices,…
Superconducting nanowire single photon detectors (SNSPDs) emerged in the last decade as a disruptive technology that features performance characteristics, such as high sensitivity, dynamic range and temporal accuracy, which are ideally…
In this work, we demonstrate the performance of a silicon-compatible high-performance self-powered photodetector.A wide detection range from visible (405 nm) to near-infrared (1550 nm) light was enabled by the vertical p-n heterojunction…
InGaAs/InP single-photon detectors (SPDs) are widely used for near-infrared photon counting in practical applications. Photon detection efficiency (PDE) is one of the most important parameters for SPD characterization, and therefore…
Multiphoton contributions pose a significant challenge for the realisation of heralded single-photon sources (HSPS) based on nonlinear processes. In this work, we improve the quality of single photons generated in this way by harnessing the…
PN heterojunctions comprising layered van der Waals (vdW) semiconductors have been used to demonstrate current rectifiers, photodetectors, and photovoltaic devices. However, a direct or near-direct bandgap at the heterointerface that can…
Configurations capable of maximizing both absorptance and polarization contrast were determined for 1550 nm polarized light illumination of different plasmonic structure integrated superconducting nanowire single-photon detectors (SNSPDs)…
High-power infrared laser systems with broadband tunability are of great importance due to their wide range of applications in spectroscopy and free-space communications. These systems require nonlinear optical (NLO) crystals for wavelength…
Achieving homogeneous performance metrics between nominally identical pixels is challenging for the operation of arrays of superconducting nanowire single-photon detectors (SNSPDs). Here, we utilize local helium ion irradiation to…
Superconducting nanowire single-photon detectors (SNSPDs) are indispensable in fields such as quantum science and technology, astronomy, and biomedical imaging, where high detection efficiency, low dark count rates and high timing accuracy…
In beam test experiments have been carried out for particle identification using digital pulse shape analysis in a 500~$\mu$m thick Neutron Transmutation Doped (nTD) silicon detector with an indigenously developed FPGA based 12 bit…
We design and experimentally characterize a balanced homodyne detector optimized for high-repetition-rate (100 MHz) pulsed optical sources. Unlike conventional transimpedance-amplifier architectures, which suffer from nonlinearities and…
We utilize the recently demonstrated orders of magnitude enhancement of extremely nondegenerate two-photon absorption in direct-gap semiconductor photodiodes to perform scanned imaging of 3D structures using IR femtosecond illumination…
The optical-to-electrical conversion, which is the basis of optical detectors, can be linear or nonlinear. When high sensitivities are needed single-photon detectors (SPDs) are used, which operate in a strongly nonlinear mode, their…