Related papers: Light-hole spin confined in germanium
Hole-spin qubits in planar Ge/SiGe heterostructures have attracted significant attention in recent years owing to their favorable electrical characteristics and prolonged coherence times. However, the strong spin-orbit interaction also…
The electronic structure of the zincblende $\beta$-HgS is not well understood. Previous first-principles calculations using fully-relativistic density functional theory and many-body perturbation theory in the fully-relativistic $GW$…
The hot-electron effect in the spin relaxation of electrically injected electrons in intrinsic Germanium is investigated by the kinetic spin Bloch equations both analytically and numerically. It is shown that in the weak-electric-field…
Holes confined in semiconductor nanostructures realize qubits where the quantum mechanical spin is strongly mixed with the quantum orbital angular momentum. The remarkable spin-orbit coupling allows for fast all electrical manipulation of…
We have measured the temperature (0.1 < T < 15 K) and magnetic field (0 < B < 32 T) dependences of longitudinal and Hall resistivities for the p-Ge_{1-x}Si_x/Ge, x=~0.07, multilayers with different Ge layer widths 10 < d_w < 38 nm and hole…
In the envelope-function approximation, interband transitions produced by electric fields are neglected. However, electric fields may lead to a spatially local ($k$-independent) coupling of band (internal, pseudospin) degrees of freedom.…
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band…
Recent theory predicted that the Quantum Spin Hall Effect, a fundamentally novel quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We have fabricated such sample structures…
Two-dimensional quantum spin Hall (QSH) insulators with reasonably wide band gaps are imperative for the development of various innovative technologies. Through systematic density functional calculations and tight-binding simulations, we…
Hole spins in semiconductors are a potential qubit alternative to electron spins. In nuclear-spin-rich host crystals like GaAs, the hyperfine interaction of hole spins with nuclei is considerably weaker than that for electrons, leading to…
Holes in planar germanium (Ge) heterostructures show promise for quantum applications, particularly in superconducting and spin qubits, due to strong spin-orbit interaction, low effective mass, and absence of valley degeneracies. However,…
Electronic structure calculations for layered zincblende semiconductors are described within a restricted basis formalism which naturally and non-perturbatively accomodates both crystalline inversion asymmetry and cubic anisotropy. These…
Being one of only two fundamental properties black holes possess, the spin of supermassive black holes (SMBHs) is of great interest for understanding accretion processes and galaxy evolution. However, in these early days of spin…
The High-Energy Storage Ring (HESR) of the future International Facility for Antiproton and Ion Research (FAIR) at GSI in Darmstadt is planned as an antiproton synchrotron and storage ring in the momentum range from 1.5 to 15 GeV/c. An…
Two-dimensional stanene is a promising candidate material for realizing room-temperature quantum spin Hall (QSH) effect. Monolayer stanene has recently been fabricated by molecular beam epitaxy, but shows metallic features on…
Due to nonzero intrinsic spin-orbit interaction in buckled honeycomb crystal structures, silicene and germanene exhibit interesting topological properties, and are therefore candidates for the realization of the quantum spin Hall effect. We…
The recent experimental hints for a relatively heavy Higgs with a mass in the range 119-125 GeV favour supersymmetric scenarios with a large mixing in the stop mass matrix. It has been shown that this is possible in the constrained Minimal…
Two-dimensional electron and hole gas systems, enabled through band structure design and epitaxial growth on planar substrates, have served as key platforms for fundamental condensed matter research and high performance devices. The…
In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al$_{2}$O$_{3}$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin…
We have investigated spin and carrier dynamics of resident holes in high-mobility two-dimensional hole systems in GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum wells at temperatures down to 400 mK. Time-resolved Faraday and Kerr rotation, as…