Related papers: AlN Nanowire Based Vertically Integrated Piezoelec…
Functional spintronic devices rely on spin-charge interconversion effects, such as the reciprocal processes of electric field-driven spin torque and magnetization dynamics-driven spin and charge flow. Both damping-like and field-like…
Accurate measurements of the nanoscale electromechanical coupling in materials, including piezo and ferroelectrics, twisted 2D layers, and biological systems is of both fundamental scientific and applied importance. Piezoresponse Force…
The rapid development of nanoscience and nanotechnology in the last two decades was stimulated by the emergence of scanning probe microscopy (SPM) techniques capable of accessing local material properties, including transport, mechanical,…
Graphene nanoribbons (GNRs) are a novel and intriguing class of materials in the field of nanoelectronics, since their properties, solely defined by their width and edge type, are controllable with high precision directly from synthesis.…
We report density functional study of alternate fullerene-like cage structures and finite closed capped single-wall nanotubes of aluminum nitride. The cages and nanotubes studied are modeled as Al24N24, Al28N28, Al32N32, Al36N36, Al48N48,…
This study presents the analysis and design of a novel quasi-zero-stiffness (QZS) based vibration sensor system for measuring absolute displacement of vibrating platforms/objects. The sensor system is constructed by using positive and…
We have investigated the vibrational density of states (VDOS) of a thin Cu nanowire with $<100>$ axial orientation and considered the effect of axial strain. The VDOS are calculated using a real space Green's function approach with the…
The current- and voltage-scaled sensitivities and signal-to-noise ratios (SNR) (with respect to thermal noise) of various octagonal AlGaN/GaN and InAlN/GaN Hall-effect sensors were examined in this work. The effect of metal contact lengths…
As a result of suppressed phonon conduction, large improvements of the thermoelectric figure of merit, ZT, have been recently reported for nanostructures compared to the raw materials' ZT values. It has also been suggested that low…
This work reports the procedure for modeling piezoelectric acoustic resonators and filters at millimeter wave (mmWave). Different from conventional methods for lower frequency piezoelectric devices, we include both acoustic and…
Harvesting low-grade heat to electricity is attractive for powering wearable electronic devices. Here, we demonstrate nW-scale thermoelectric power generation in devices from thin film assemblies of microwave-synthesized p-Sb2Te3 nanoplates…
The nitrogen-vacancy (NV) center occurs in GaAs bulk crystals doped or implanted with nitrogen. The local vibration of nitrogen gives rise to a sharp infrared absorption band at 638 cm$^{-1}$, exhibiting a fine structure due to the…
We present fabrication of 570-um-thick, millimeter-sized soda-lime-silicate float glass blocks with a 1-um-thick AlN-thin-film piezoelectric transducer sandwiched between thin metallic electrodes and deposited on the top surface. The…
Vanadium tetracyanoethylene (V[TCNE]$_\text{x}$) is an organic-based ferrimagnet that exhibits robust magnetic ordering (T$_\text{C}$ of over 600 K), high quality-factor (high-Q) microwave resonance (Q up to 3,500), and compatibility with a…
In this work we present a comparison of multiband k.p-models, the effective bond-orbital approach, and an empirical tight-binding model to calculate the electronic structure for the example of a truncated pyramidal GaN/AlN self-assembled…
Reconstructing complex magnetization textures from nitrogen-vacancy (NV) magnetometry stray-field measurements presents a challenging inverse problem. In this work, we introduce a physics-informed method that addresses this by incorporating…
Strain engineering in semiconductor nanostructures offers a promising route to optimize electronic and optical properties for advanced quantum technologies. This study explores the relationship between core and shell thicknesses and strain…
Nanocrystalline Si and Ge are of high interest for integrated Si photonics related to light emission, optical sensors, photodetectors, solar energy harvesting and conversion devices, and also for floating gate non-volatile memories (NVMs).…
Aluminum nitride is piezoelectric and exhibits spontaneous polarization along the $c$-axis, but the polarization cannot be switched by applying an electric field. Adding Sc to AlN enhances the piezoelectric properties, and can make the…
Indium gallium nitride (InGaN) quantum well (QW) micro- and nanoscale light-emitting diodes (LEDs) are promising for next-generation ultrafast optical interconnects and augmented/virtual reality displays. However, scaling to nanoscale…