Related papers: Spin-orbit torque in single-molecule junctions fro…
In this work we demonstrate a spin-orbit torque (SOT) magnetic field sensor, designed as a Ta/CoFeB/MgO structure, with high sensitivity and capable of active offset compensation in all three spatial directions. This is described and…
Current-induced spin-orbit torque (SOT) is regarded as a promising mechanism for driving neuromorphic behavior in spin-orbitronic devices. In principle, the strong SOT in heavy metal-based magnetic heterostructure is attributed to the…
The discovery of efficient magnetization switching activated by the spin Hall effect (SHE)-induced spin-orbit torque (SOT) changed the course of magnetic random-access memory (MRAM) research and development. However, for systems with…
Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and…
Efficient generation of spin-orbit torques (SOTs) is central for the exciting field of spin-orbitronics. Platinum, the archetypal spin Hall material, has the potential to be an outstanding provider for spin-orbit torques due to its giant…
Spin-orbit torques offer a promising mechanism for electrically controlling magnetization dynamics in nanoscale heterostructures. While spin-orbit torques occur predominately at interfaces, the physical mechanisms underlying these torques…
Artificial modulation of a neuronal subset through ion channels activation can initiate firing patterns of an entire neural circuit in vivo. As nanovalves in the cell membrane, voltage-gated ion channels can be artificially controlled by…
Antiferromagnets are outstanding candidates for the next generation of spintronic applications, with great potential for downscaling and decreasing power consumption. Recently, the manipulation of bulk properties of antiferromagnets has…
Spin-orbit torques (SOT) allow the electrical control of magnetic states. Current-induced SOT switching of the perpendicular magnetization is of particular technological importance. The SOT consists of damping-like and field-like torques so…
The discovery of spin-orbit torques (SOTs) generated through the spin Hall or Rashba effects provides an alternative write approach for magnetic random-access memory (MRAM), igniting the development of spin-orbitronics in recent years.…
Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a…
Recent experimental conductance measurements performed on paramagnetic molecular adsorbates on a superconducting surface, using superconducting scanning tunneling microscopy techniques, are theoretically investigated. For low temperatures,…
We theoretically study spin-transfer torque (STT) in a graphene system with spin-orbit coupling (SOC). We consider a graphene-based junction where the spin-orbit coupled region is sandwiched between two ferromagnetic (F) segments. The…
Self-oscillations of the magnetization due to self-induced torque (SIT) in a magnetic double tunnel junction that consists of perpendicularly polarized, pinned and free layers is investigated along with the field-like torque (FLT). The…
The magnetization manipulation by spin-orbit torques (SOTs) in nonmagnetic-metal (NM)/ferromagnet (FM) heterostructures has provided great opportunities for spin devices. Besides the conventional spin Hall effect (SHE) in heavy metals with…
Individual magnetic molecules are promising building blocks for quantum technologies because of their chemical tunability, nanoscale dimensions, and ability to self-assemble into ordered arrays. However, harnessing their properties in…
We investigate from first principles the field-like spin-orbit torques (SOTs) in a Ag$_{2}$Bi-terminated Ag(111) film grown on ferromagnetic Fe(110). We find that a large part of the SOT arises from the spin-orbit interaction (SOI) in the…
Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in…
High-entropy alloy (HEA) is a family of metallic materials with nearly equal partitions of five or more metals, which might possess mechanical and transport properties that are different from conventional binary or tertiary alloys. In this…
We propose a mechanism for detection of a single spin center on a non-magnetic substrate. In the detection scheme, the STM tunnel current is correlated with the spin orientation. In the presence of magnetic field, the spin precesses and the…