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We develop a theory for the inclusion of adatom interactions in second layer nucleation occurring in epitaxial growth. The interactions considered are due to ring barriers between pairs of adatoms and binding energies of unstable clusters.…

Materials Science · Physics 2009-11-07 S. Heinrichs , P. Maass

In the electrochemical deposition of thin films the measurement of the current-time curve does not allow for a direct determination of the nucleus growth law, electrode surface coverage and mean film thickness. In this work we present a…

Soft Condensed Matter · Physics 2018-03-07 S. Politi , M. Tomellini

The morphological stability of two-dimensional islands nucleated on a substrate during vacuum or vapour-phase atom deposition is investigated. Using simple scaling arguments, it is shown that, contrary to expectation, dendritic islands may…

Statistical Mechanics · Physics 2007-05-23 Alberto Pimpinelli

Understanding surface dynamics during epitaxial film growth is key to growing high quality materials with controllable properties. X-ray photon correlation spectroscopy (XPCS) using coherent x-rays opens new opportunities for in situ…

The ability to predict the morphology of crystals formed by chemical reactions is of fundamental importance for the shape-controlled synthesis of nanostructures. Based on the atomistic mechanism for crystal growth under different driving…

Materials Science · Physics 2009-11-13 B. Viswanath , Paromita Kundu , B. Mukherjee , N. Ravishankar

We establish a local minimality sufficiency criterion, based on the strict positivity of the second variation, in the context of a variational model for the epitaxial growth of elastic films. Our result holds also in the three-dimensional…

Analysis of PDEs · Mathematics 2016-12-21 Marco Bonacini

We show that elongated nanowires can be grown on crystal surfaces by allowing large strained two-dimensional islands to desorb by varying the adatom supersaturation or chemical potential. The width of the wires formed in this process is…

Materials Science · Physics 2009-11-10 V. B. Shenoy

This paper provides an elementary introduction to the basic concepts used in describing epitaxial crystal growth in terms of the thermodynamics and kinetics of atomic steps. Selected applications to morphological instabilities of stepped…

Materials Science · Physics 2007-05-23 Joachim Krug

The stability of interfaces and the mechanisms of thin film growth on semiconductors are issues of central importance in electronic devices. These issues can only be understood through detailed study of the relevant microscopic processes.…

mtrl-th · Physics 2016-09-07 Efthimios Kaxiras

Today the study of two-dimensional (2D) materials has become one of the key objectives of materials science. Unlike their three-dimensional counterparts, 2D materials can simultaneously demonstrate unique transport and mechanical properties…

Materials Science · Physics 2021-03-16 Arslan B. Mazitov , Artem R. Oganov

GaAs quantum dots grown by droplet etching epitaxy are high-quality solid-state sources of quantum light. Despite implementation in devices that exploit quantum phenomenon, a comprehensive review on the crystal growth of quantum dots grown…

Mesoscale and Nanoscale Physics · Physics 2026-04-20 Declan Gossink , Undurti S. Sainadh , Glenn S. Solomon

We study a simple growth model for (d+1)-dimensional films of binary alloys in which atoms are allowed to interact and equilibrate at the surface, but are frozen in the bulk. The resulting crystal is highly anisotropic: Correlations…

Statistical Mechanics · Physics 2009-10-28 Barbara Drossel , Mehran Kardar

We present models of surfaces of crystals in an environment where molecular beam epitaxy (MBE) and related methods of crystal growth like atomic layer epitaxy (ALE) can be performed. Besides detailed models of reconstructed (001) surfaces…

Materials Science · Physics 2007-05-23 Martin Ahr

A static variational model for shape formation in heteroepitaxial crystal growth is considered. The energy functional takes into account surface energy, elastic misfit-energy and nucleation energy of dislocations. A scaling law for the…

Analysis of PDEs · Mathematics 2024-03-21 Lukas Abel , Janusz Ginster , Barbara Zwicknagl

Epitaxial self-assembled quantum dots (SAQDs) represent an important step in the advancement of semiconductor fabrication at the nanoscale that will allow breakthroughs in electronics and optoelectronics. In these applications, order is a…

Materials Science · Physics 2007-06-11 Lawrence H. Friedman

We use Monte-Carlo simulations to study island formation in the growth of thin semiconducting films deposited on lattice-mismatched substrates. It is known that islands nucleate with critical nuclei of about one atom and grow two…

Materials Science · Physics 2009-10-31 K. E. Khor , S. Das Sarma

Epitaxial growth methods are a key technology used in producing large-area thin films on substrates but as a result of various factors controlling growth processes the rational optimization of growth conditions is rather difficult.…

Statistical Mechanics · Physics 2019-09-26 Kazuhiko Seki

The mechanisms of stability or instability in the strained alloy film growth are of intense current interest to both theorists and experimentalists. We consider dislocation-free, coherent, growing alloy films which could exhibit a…

Statistical Mechanics · Physics 2009-11-07 Zhi-Feng Huang , Rashmi C. Desai

The nucleation and growth of two--dimensional islands is studied with Monte Carlo simulations of a pair--bond solid--on--solid model of epitaxial growth. The conventional description of this problem in terms of a well--defined critical…

Condensed Matter · Physics 2009-10-28 C. Ratsch , P. Šmilauer , A. Zangwill , D. D. Vvedensky

The role of step edge diffusion (SED) in epitaxial growth is investigated. To this end we revisit and extend a recently introduced simple cubic solid-on-solid model, which exhibits the formation and coarsening of pyramid or mound like…

Statistical Mechanics · Physics 2009-10-31 S. Schinzer , M. Kinne , M. Biehl , W. Kinzel