Related papers: 2D MoS2 under switching field conditions: study of…
Newly measured optical absorption and photoluminescence spectra reveal substantial frequency shifts of both exciton and trion peaks as monolayer MoS2 is cooled from 363 K to 4 K. First-principles simulations using the GW-Bethe-Salpeter…
A direct band gap, remarkable light-matter coupling as well as strong spin-orbit and Coulomb interaction establish two-dimensional (2D) crystals of transition metal dichalcogenides (TMDs) as an emerging material class for fundamental…
We report a new approach to integrating high-\k{appa} dielectrics in both bottom- and top-gated MoS2 field-effect transistors (FETs) through thermal oxidation and mechanical assembly of layered twodimensional (2D) TaS2. Combined X-ray…
The coupling of the electron system to lattice vibrations and their time-dependent control and detection provides unique insight into the non-equilibrium physics of semiconductors. Here, we investigate the ultrafast transient response of…
Here we report the properties of field-effect transistors based on few layers of chemical vapor transport grown alpha- MoTe_2 crystals mechanically exfoliated onto SiO_2. We performed field-effect and Hall mobility measurements, as well as…
Excellent gate electrostatics in field effect transistors (FETs) based on two-dimensional transition metal dichalcogenide (2D TMD) channels can dramatically decrease static power dissipation. Energy efficient FETs operate in enhancement…
Charge-to-spin and spin-to-charge conversion mechanisms in high spin-orbit materials are the new frontier of memory devices. They operate via spin-orbit torque (SOT) switching of a magnetic electrode, driven by an applied charge current. In…
Large-scale atomistic simulations using the reactive empirical bond order force field approach is implemented to investigate thermal and mechanical properties of single-layer (SL) and multi-layer (ML) molybdenum disulfide (MoS$_2$). The…
We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30-60 cm2/Vs, relatively…
Superconducting quantum interference devices (SQUIDs) show great promise as quantum bits (qubits) but continue to be hindered by flux noise. The flux noise power spectra of SQUIDs go as $1/f^\alpha$, where $\alpha$ is the…
Thermal transport in single layer molybdenum disulfide (MoS2) is critical to advancing its applications. In this paper, we use molecular dynamics (MD) simulations with first-principles force constants to study the isotope effect on the…
Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility…
The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental…
We present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal that the…
In the present paper, we theoretically study the effect of density of state variation on the phenomena in the discontinuous magnetic field. Special attention is paid to the transient processes when the magnetic field is switched on (off).…
Since the very first experiments, superconducting circuits have suffered from strong coupling to environmental noise, destroying quantum coherence and degrading performance. In state-of-the-art experiments, it is found that the relaxation…
We demonstrated selective gas sensing with MoS2 thin-film transistors using the change in the channel conductance, characteristic transient time and low-frequency current fluctuations as the sensing parameters. The back-gated MoS2 thin-film…
We investigate near-field energy transfer between chemically synthesized quantum dots (QDs) and two-dimensional semiconductors. We fabricate devices in which electrostatically gated semiconducting monolayer molybdenum disulfide (MoS2) is…
Two-dimensional (2D) materials like transition metal dichalcogenides (TMD) have proved to be serious candidates to replace silicon in several technologies with enhanced performances. In this respect, the two remaining challenges are the…
Controlling the morphology of two-dimensional (2D) transition metal dichalcogenides (TMDs) plays a key role in their applications. Although chemical vapor deposition can achieve wafer-scale growth of 2D TMDs, a comprehensive theoretical…