Related papers: Angular Position Sensor Based on Anisotropic Magne…
We have developed a mechanical absolute-rotation sensor capable of resolving ground rotation angle of less than 1 nrad$/\sqrt{\text{Hz}}$ above $30$ mHz and 0.2 nrad$/\sqrt{\text{Hz}}$ above $100$ mHz about a single horizontal axis. The…
Recently, the extremely large magnetoresistance observed in transition metal telluride, like WTe$_2$, attracted much attention because of the potential applications in magnetic sensor. Here we report the observation of extremely large…
The orientation of the tilted magnetic anisotropy has crucial importance in many spintronic devices. However, it is very challenging to determine it especially in very small structures produced by lithography. Here, we propose a new…
Despite their widespread use in determining system attitude, Micro-Electro-Mechanical Systems (MEMS) Attitude and Heading Reference Systems (AHRS) are limited by sensor measurement biases. This paper introduces a method called MAgnetometer…
Spin-orbit torque provides an efficient pathway to manipulate the magnetic state and magnetization dynamics of magnetic materials, which is crucial for energy-efficient operation of a variety of spintronic devices such as magnetic memory,…
High-order anisotropic magnetoresistance (AMR) is observed up to the 18th harmonic in cubic Fe(001) thin films, overturning the long-standing paradigm that only two- and four-fold terms are symmetry-allowed. Using angle-resolved transport…
Magnetic nanowires are a good platform to study fundamental processes in Magnetism and have many attractive applications in recording such as perpendicular storage and in spintronics such as non-volatile magnetic memory devices (MRAM) and…
Anomalous gating effects-such as gate ineffectiveness and pronounced hysteresis-have been observed in graphene-based systems encapsulated in boron nitride (BN) and linked to a possible ferroelectric state. However, their origin, stability,…
Magneto-resistance is a physical effect of great fundamental and industrial interest since it is the basis for the magnetic field sensors used in computer read-heads and Magnetic Random Access Memories. As device dimensions are reduced,…
Understanding magnetoresistance, the change in electrical resistance upon an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials…
We developed a new technique for measuring the thermodynamic entropy as a function of the magnetic field angle. This technique enables high-resolution angle-resolved measurements of the entropy in an unprecedentedly short measuring time.…
Localized laser heating creates temperature gradients in all directions and thus leads to three-dimensional electron flux in metallic materials. Temperature gradients in combination with material magnetization generate thermomagnetic…
The magnetic anisotropy of antiferromagnets plays a crucial role in stabilising the magnetisation of many spintronic devices. In non-collinear antiferromagnets such as IrMn the symmetry and temperature dependence of the effective anisotropy…
We present a high resolution method for measuring magnetostriction in millisecond pulsed magnetic fields at cryogenic temperatures with a sensitivity of $1.11\times10^{-11}/\sqrt{\rm Hz}$. The sample is bonded to a thin piezoelectric plate,…
In the last decade, nanoscale resistive devices with memory have been the subject of intense study because of their possible use in brain-inspired computing. However, operational endurance is one of the limiting factors in the adoption of…
The electric field effect on magnetic anisotropy was studied in an ultrathin Fe(001) monocrystalline layer sandwiched between Cr buffer and MgO tunnel barrier layers, mainly through post-annealing temperature and measurement temperature…
We have theoretically studied the full counting statistics of electron transport through a single-molecule magnet (SMM) with an arbitrary angle between the applied magnetic field and the SMM's easy axis above the sequential tunneling…
We report a detailed investigation of the Ni$_{2}$MnGa shape memory alloy through magnetic, electronic, and thermal measurements. Our measurements of the anomalous Nernst effect (ANE) reveal that this technique is very sensitive to the…
We consider a magnet with uniaxial anisotropy in an external magnetic field along the anisotropy direction, but with a field magnitude smaller than the coercive field. There are three representative magnetization configurations…
We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools…