Related papers: SiPM understanding using simple Geiger-breakdown s…
Silicon photomultipliers (SiPMs) have a low radioactivity, compact geometry, low operation voltage, and reasonable photo-detection efficiency for vacuum ultraviolet light (VUV). Therefore it has the potential to replace photomultiplier…
The application of silicon photomultiplier (SiPM) technology for weak-light detection at a single photon level has expanded thanks to its better photon detection efficiency in comparison to a conventional photomultiplier tube (PMT). SiPMs…
In this work we study the performance of silicon photomultiplier (SiPM) light sensors after exposure to the JULIC cyclotron proton beam, of energy $\sim$ 39 MeV, relative to their performance before exposure. The SiPM devices used in this…
We demonstrate an efficient photon number detector for visible wavelengths using a silicon avalanche photodiode. Under subnanosecond gating, the device is able to resolve up to four photons in an incident optical pulse. The detection…
In our Ultra-Fast Astronomy (UFA) program, we aim to improve measurements of variability of astronomical targets on millisecond and shorter time scales. In this work, we present initial on-sky measurements of the performance of silicon…
In this article we describe the photon detection readout electronics for the nEDM@SNS experiment. The chosen "photon counting" architecture, which utilizes high-efficiency silicon photomultipliers (SiPMs) and is appropriate for low-light…
The gain-voltage dependence for SiPMs from V. Chmill et al., Study of the breakdown voltage of SiPMs, is reanalyzed and a non-linearity at the sub-percent level is observed. Simulations show that he non-linearity can be explained by the…
Sensitive avalanche photodetectors (APDs) that operate within the ultraviolet spectrum are critically required for applications in detecting fire and deep-space exploration. However, the development of such devices faces significant…
Silicon Photo-Multipliers (SiPMs) are semiconductor-based photo-detectors with performances similar to the traditional Photo-Multiplier Tubes (PMTs). An increasing number of experiments dedicated to particle detection in colliders,…
A Pixelized Photon Detector (PPD) is a generic name for the semiconductor devices operated in the Geiger-mode, such as Silicon PhotoMultiplier and Multi-Pixel Photon Counter, which has high photon counting capability. While the internal…
We demonstrate the importance and utility of Monte Carlo simulation of single-photon detectors. Devising an optimal simulation is strongly influenced by the particular application because of the complexity of modern, avalanche-diode-based…
Afterpulsing is one of the main technological flaws present in photon counting detectors based on solid-state semiconductor avalanche photodiodes operated in Geiger mode. Level of afterpulsing depends mainly on type of the semiconductor,…
Number-resolving single photon detectors are essential for the implementation of numerous innovative quantum information schemes. While several number-discriminating techniques have been previously presented, the Silicon Photo-Multiplier…
A Python program has been developed which fits a published detector-response model to SiPM charge spectra to characterise SiPMs. Spectra for SiPMs illuminated by low intensity pulsed light with Poisson-distributed number of photons and a…
The Light-only Liquid Xenon experiment (LoLX) employs a small-scale detector equipped with 96 Hamamatsu VUV4 silicon photomultipliers (SiPMs) submerged in 5 kg of liquid xenon (LXe) to perform characterization measurements of light…
We present a gated silicon single photon detector based on a commercially available avalanche photodiode. Our detector achieves a photon detection efficiency of 45\pm5% at 808 nm with 2x 10^-6 dark count per ns at -30V of excess bias and…
We present a 'digital SiPM' photo-detection chip combining single photon sensitive avalanche photo diodes and CMOS readout electronics on a single die. The chip has a size of $8046\times9032\,\mu m^2$ with $72.5\%$ of photo sensitive area.…
Characterization measurements of $25~\mathrm{\mu m} \times 25~\mathrm{\mu m}$ pitch 3D silicon sensors are performed, for devices with active thickness of $150~\mu$m. Evidence of charge multiplication caused by impact ionization below the…
Integrated quantum photonics, which allows for the development and implementation of chip-scale devices, is recognized as a key enabling technology on the road towards scalable quantum networking schemes. However, many state-of-the-art…
Radiation-hard silicon sensors used in high-energy physics require a high electric field and are susceptible to surface breakdown. This study aims to improve the understanding of the underlying mechanisms by developing new methods to probe…