Related papers: RESURF Ga$_{2}$O$_{3}$-on-SiC Field Effect Transis…
The $\beta$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in $\beta$-Ga$_2$O$_3$ has…
Ferroelectric field-effect transistors (Fe-FETs) with ferroelectric hafnium oxide (FE HfO2) as gate insulator are being extensively explored as a promising device candidate for three-dimensional (3D) NAND memory application. FE HfO2…
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…
Neuromorphic computing architectures enable the dense co-location of memory and processing elements within a single circuit. This co-location removes the communication bottleneck of transferring data between separate memory and computing…
Fully-processed SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) emit light during switching of the gate terminal, while both drain and source terminals are grounded. The emitted photons are caused by defect-assisted…
Heterostructures comprising uncoated ZnO and coated with thin layers of Ga$_2$O$_3$ were produced using spin-coating and subsequent hydrothermal processing. X-ray diffraction examination verifies the structural integrity of the synthesized…
An electrostatic field, which is applied to a gated high-temperature superconducting (HTSC) film, is believed to affect the film similar to charge doping. Analyzing the pairing in terms of a t-J model, we show that a coupling to electric…
The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-state conduction. Substantive device design strategies to…
Hybrid dielectric metasurfaces have emerged as a promising approach to enhancing near field confinement and thus achieving high optical nonlinearity using low loss dielectrics. Additional flexibility in design and fabrication of hybrid…
Printed circuit metasurfaces have attracted significant attention in the microwave community for their versatile wavefront manipulation capability. Despite their promising potential in telecommunications and radar applications, few…
Current memcapacitor implementations typically demand complex fabrication processes or depend on organic materials exhibiting poor environmental stability and reproducibility. Here, we demonstrate memcapacitor structures utilizing a quasi…
Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor…
NiO/Ga$_{2}$O$_{3}$ heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we report on the time evolution of the static electrical…
$\beta$-Ga$_{2}$O$_{3}$ nanomembranes, obtained by ion-beam-assisted exfoliation, are used in the fabrication of simple metal-semiconductor-metal (MSM) structures, that are tested as photodetectors (PD) and field-effect transistors (FET).…
We realize a suppression of an electromagnetically induced transparency (EIT) like transmission in a metasurface induced by a local electric field that is strongly enhanced based on two approaches: squeezing of electromagnetic energy in…
The direct integration of GaN with Si can boost great potential for low-cost, large-scale, and high-power device applications. However, it is still challengeable to directly grow GaN on Si without using thick strain relief buffer layers due…
Due to its high charge carrier mobility, broadband light absorption, and ultrafast carrier dynamics, graphene is a promising material for the development of high-performance photodetectors. Graphene-based photodetectors have been…
The sixth-generation (6G) era comes with the challenge of offering highly energy-efficient and autonomous communications securely. In this direction, we report energy efficiency (EE), energy harvesting (EH), and secure performance by…
A bilayer graphene based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed in this work. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on…
Solar redox flow batteries (SRFB) have received much attention as an alternative integrated technology for simultaneous conversion and storage of solar energy. Yet, the photocatalytic efficiency of semiconductor-based single photoelectrode,…