Related papers: Optimization of the plasmonic properties of titani…
To integrate plasmonic devices into industry, it is essential to develop scalable and CMOS compatible plasmonic materials. In this work, we report high plasmonic quality titanium nitride (TiN) on c-plane sapphire by plasma enhanced atomic…
This work reports a pulsed laser-assisted synthesis, detailed structural characterization, and study of plasmonic properties of three sets of TiN/TiNO thin films with high electron density. The first two sets of TiN films were grown at 600C…
Due to their exceptional plasmonic properties, noble metals such as gold and silver have been the materials of choice for the demonstration of various plasmonic and nanophotonic phenomena. However, noble metals' softness, lack of…
Transition metal nitrides have received significant interest for use within plasmonic and optoelectronic devices. However, deposition temperature remains a significant barrier to the integration of transition metal nitrides as plasmonic…
The superconducting critical temperature (Tc > 15K) of niobium titanium nitride (NbTiN) thin films allows for low-loss circuits up to 1.1 THz, enabling on-chip spectroscopy and multi-pixel imaging with advanced detectors. The drive for…
This study presents a comprehensive investigation into the exceptional superconducting attributes of titanium nitride (TiN) achieved through plasma-enhanced atomic layer deposition (PEALD) on both planar and intricate three-dimensional (3D)…
We have investigated properties of superconducting titanium nitride (TiN) films that were sputtered over a large range of RF-induced DC bias voltage applied to the substrate. Films grown with the largest bias voltages contained cubic TiN…
Al-doped ZnO thin films were deposited using reactive high power impulse magnetron sputtering at substrate temperatures between room temperature and 600 $\bullet$ C. Two sample series with different oxygen partial pressures were studied.…
The development of plasmonic and metamaterial devices requires the research of high-performance materials, alternative to standard noble metals. Renewed as refractory stable compound for durable coatings, titanium nitride has been recently…
Plasmonic nanomaterials offer a direct and effective approach to harnessing solar energy. Specifically, plasmonic semiconductors enable a highly efficient light-to-heat conversion process, outperforming noble metals in stability,…
By combining first principles theoretical calculations and experimental optical and structural characterization such as spectroscopic ellipsometry, X-ray spectroscopy, and electron microscopy, we study the dielectric permittivity and…
Soft ferromagnetic NiFe thin films are promising for applications in spintronic devices because of their constituent electrical and magnetic properties. Electron beam evaporation and sputtering techniques have been used to deposit NiFe thin…
We present a systematic study of the properties of TiN films by varying the deposition conditions in an ultra-high-vacuum reactive magnetron sputtering chamber. By increasing the deposition pressure from 2 to 9 mTorr while keeping a nearly…
Titanium nitride (TiN) is a paradigm of refractory transition metal nitrides with great potential in vast applications. Generally, the plasmonic performance of TiN can be tuned by oxidation, which was thought to be only temperature-, oxygen…
5$\mu$m thick SmCo films were deposited onto Si substrates using triode sputtering. A study of the influence of deposition temperature (Tdep <= 600 degrees C) on the structural, magnetic and mechanical properties has shown that optimum…
Nanophotonic devices offer an unprecedented ability to concentrate light into small volumes which can greatly increase nonlinear effects. However, traditional plasmonic materials suffer from low damage thresholds and are not compatible with…
Titanium nitride is a material of interest for many superconducting devices such as nanowire microwave resonators and photon detectors. Thus, controlling the growth of TiN thin films with desirable properties is of high importance. In…
This paper reports on the deposition and photoluminescence of amorphous and crystalline thin films of zinc gallium oxide with Ga:Zn atomic ratio varied between 0.3 and 5.7. The films are prepared by reactive direct current magnetron…
Al2O3 thin films have been deposited at substrate temperatures between 500{\deg}C to 600{\deg}C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films…
Being one of the strongest materials, ternary TiSiN exhibits a very interesting family of binary transition metal nitride and silicide systems. A novel technique to fabricate morphologically fascinating nano and micro structures of TiSiN is…