English
Related papers

Related papers: Symmetry-Driven Valleytronics in Single-Layer Tin …

200 papers

Valleytronics is a rapidly advancing field that explores the use of the valley degree of freedom in electronic systems to encode and process information. It relies on electronic states with spin valley locking, first predicted and observed…

Mesoscale and Nanoscale Physics · Physics 2026-04-09 Subin Mali , Yingdong Guan , Lujin Min , David Graf , Zhiqiang Mao

While conventional semiconductor technology relies on the manipulation of electrical charge for the implementation of computational logic, additional degrees of freedom such as spin and valley offer alternative avenues for the encoding of…

Increasing the speed limits of conventional electronics requires innovative approaches to manipulate other quantum properties of electrons besides their charge. An alternative approach utilizes the valley degree of freedom in…

Mesoscale and Nanoscale Physics · Physics 2023-03-29 A. O. Slobodeniuk , P. Koutenský , M. Bartoš , F. Trojánek , P. Malý , T. Novotný , M. Kozák

Due to degeneracies arising from crystal symmetries, it is possible for electron states at band edges ("valleys") to have additional spin-like quantum numbers. An important question is whether coherent manipulation can be performed on such…

Semiconducting transition metal dichalcogenide monolayers have emerged as promising candidates for future valleytronics-based quantum information technologies. Two distinct momentum-states of tightly-bound electron-hole pairs in these…

Mesoscale and Nanoscale Physics · Physics 2017-03-16 Gerd Plechinger , Tobias Korn , John M. Lupton

Charge carriers in two-dimensional transition metal dichalcogenides (TMDs), such as WSe$_2$, have their spin and valley-pseudospin locked into an optically-addressable index that is proposed as a basis for future information processing. The…

Mesoscale and Nanoscale Physics · Physics 2021-03-17 Weijie Li , Xin Lu , Jiatian Wu , Ajit Srivastava

The robust spin and momentum valley locking of electrons in two-dimensional semiconductors make the valley degree of freedom of great utility for functional optoelectronic devices. Owing to the difference in optical selection rules for the…

Two-dimensional semiconductors feature valleytronics phenomena due to locking of the spin and momentum valley of the electrons. However, the valley polarization is intrinsically limited in monolayer crystals by the fast intervalley…

Mesoscale and Nanoscale Physics · Physics 2019-07-10 Long Zhang , Rahul Gogna , G. William Burg , Jason Horng , Eunice Paik , Yu-Hsun Chou , Kyounghwan Kim , Emanuel Tutuc , Hui Deng

We report on scattering induced valley polarization enhancement in monolayer molybdenum disulfide. With thermally activated and charge doping introduced scattering, our sample exhibits seven? and twelve-folds of improvements respectively.…

Optics · Physics 2021-10-13 Yueh-Chun Wu , Takashi Taniguchi , Kenji Watanabe , Jun Yan

Optical selection rule fundamentally determines the optical transition between energy states in a variety of physical systems from hydrogen atoms to bulk crystals such as GaAs. It is important for optoelectronic applications such as lasers,…

Materials Science · Physics 2016-04-01 Jun Xiao , Ziliang Ye , Ying Wang , Hanyu Zhu , Yuan Wang , Xiang Zhang

Alloyed transition metal dichalcogenides provide an opportunity for coupling band engineering with valleytronic phenomena in an atomically-thin platform. However, valley properties in alloys remain largely unexplored. We investigate the…

Mesoscale and Nanoscale Physics · Physics 2020-01-17 Sean M. Oliver , Joshua Young , Sergiy Krylyuk , Thomas L. Reinecke , Albert V. Davydov , Patrick M. Vora

Lead and tin chalcogenides have been studied widely due to their promising thermoelectric (TE) properties. Further enhancement in their TE efficiency has been reported upon the reduction of the dimension, which is an important feature in…

Materials Science · Physics 2020-10-14 Abhiyan Pandit , Bothina Hamad

The valley degree of freedom of electrons in materials promises routes toward energy-efficient information storage with enticing prospects towards quantum information processing. Current challenges in utilizing valley polarization are…

Electrons in two-dimensional materials possess an additional quantum attribute, the valley pseudospin, labelled as $\mathbf{K}$ and $\mathbf{K}^{\prime}$ -- analogous to the spin up and spin down. The majority of research to achieve…

Optics · Physics 2023-06-06 Navdeep Rana , Gopal Dixit

Monolayer (1L) transition metal dichalcogenides (TMDs) provide a unique opportunity to control the valley degree of freedom of optically excited charge carriers due to the spin-valley locking effect. Despite extensive studies of the…

Interfacing atomically thin van der Waals semiconductors with magnetic substrates enables additional control on their intrinsic valley degree of freedom and provides a promising platform for the development of novel valleytronic devices for…

Graphene, and other members of the monolayer Xene family, represent an ideal materials platform for "valleytronics", the control of valley localized charge excitations. The absence of a gap in these semi-metals, however, precludes valley…

Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between the spin and the valleys degrees of freedom. The strong spin-orbit interaction and broken inversion symmetry within…

In transition metal dichalcogenides, the valley degree of freedom directly couples valley-polarised excitons - excited by circularly polarised light - to valley-dependent chiral photons, enabling ultrafast light-driven valleytronics.…

In monolayers of semiconducting transition metal dichalcogenides, the light helicity ($\sigma^+$ or $\sigma^-$) is locked to the valley degree of freedom, leading to the possibility of optical initialization of distinct valley populations.…

Mesoscale and Nanoscale Physics · Physics 2016-05-25 T. Smoleński , M. Goryca , M. Koperski , C. Faugeras , T. Kazimierczuk , K. Nogajewski , P. Kossacki , M. Potemski