Related papers: Mass inversion at the Lifshitz transition in monol…
Here we show, with simultaneous transport and photoemission measurements, that the graphene terminated SiC(0001) surface undergoes a metal-insulator transition (MIT) upon dosingwith small amounts of atomic hydrogen. We find the room…
We present first-principles calculations of quantum transport in chemically doped graphene nanoribbons with a width of up to 4 nm. The presence of boron and nitrogen impurities is shown to yield resonant backscattering, whose features are…
Metal intercalation in epitaxial graphene enables the emergence of proximity-induced superconductivity and modified quantum transport properties. However, systematic transport studies of intercalated graphene have been hindered by…
Graphene has vast promising applications on the nanoelectronics and spintronics because of its unique magnetic and electronic properties. Making use of an ab initio spin-polarized density functional theory, implemented by the method of…
Modulation doping, a well-established technique for traditional semiconductor heterostructures, is a promising approach for tailoring carrier concentration in 2D materials devices. In this letter we report on photoinduced modulation doping…
Gray tin ({\alpha}-Sn) layers with 30 nm thickness were grown on InSb (001) substrates using molecular beam epitaxy. The surface preparation of the substrates was adjusted to achieve either n-type or p-type doping in the {\alpha}-Sn layer.…
Angle-resolved photoemission spectroscopy (ARPES) reveals effects of electron doping, which is realized by Co and Ni substitution for Fe in FeTe$_{1-y}$Se$_{y}$ (y$\sim$0.35) superconductor. The data show consistent band shifts as well as…
We report high-precision resistance measurements on quantum Hall resistance devices fabricated from uniform epitaxial graphene grown by propane-hydrogen chemical vapor deposition on a two-inch silicon carbide substrate. Through molecular…
In the present work, we investigate how structural defects in graphene can change its transport properties. In particular, we show that breaking of the sublattice symmetry in a graphene monolayer overcomes the Klein effect, leading to…
Ballistic transport occurs whenever electrons propagate without collisions deflecting their trajectory. It is normally observed in conductors with a negligible concentration of impurities, at low temperature, to avoid electron-phonon…
Although plasmon modes exist in doped graphene, the limited range of doping achieved by gating restricts the plasmon frequencies to a range that does not include visible and infrared. Here we show, through the use of first-principles…
The pseudospin of Dirac electrons in graphene manifests itself in a peculiar momentum anisotropy for photo-excited electron-hole pairs. These interband excitations are in fact forbidden along the direction of the light polarization, and are…
The quantum capacitance model is applied to obtain an exact solution for the space-resolved carrier density in a multigated doped graphene sheet at zero temperature, with quantum correction arising from the finite electron capacity of the…
We report here the charge transport behavior in graphene nanojunctions in which graphene nanodots, with relatively long relaxation time, are interfaced with ferromagnetic electrodes. Subsequently we explore the effect of substitutional…
We propose a graphene-based model for realizing a new type of gapless condensate by pairing of electron-like (n) carriers of a Dirac cone conduction band with hole-like (p) carriers of a Dirac valance band. Ferromagnetic superconductivity…
Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined…
Charge carriers in graphene are chiral quasiparticles ("massless Dirac fermions"). Graphene provides therefore an amazing opportunity to study subtle quantum relativistic effects in condensed matter experiment. Here I review a theory of one…
The single-band current-dipole Kubo formula for the dynamical conductivity of heavily doped graphene from Kup\v{c}i\'{c} [Phys. Rev. B 91, 205428 (2015)] is extended to a two-band model for conduction $\pi$ electrons in lightly doped…
To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dichalcogenides (TMDs), considerable effort has been put into…
The doping of graphene to tune its electronic structure is essential for its further use in carbon based electronics. Adapting strategies from classical silicon based semiconductor technology, we use the incorporation of heteroatoms in the…