Related papers: Direction dependent switching of carrier-type enab…
It is shown that the conductance $G$ of the quantum microconstriction in the metal with an opened Fermi surface as a function of the contact diameter undergoes the jumps $e^{2}/h$ of the opposite sign. The negative jumps is the result of…
The Berry curvature dipole is well-known to cause Hall conductivity. This study expands on previous results to demonstrate how two- and three-dimensional materials react under a tilted magnetic field in the linear and nonlinear regimes. We…
In most conductors current flow perpendicular to electric field direction (Hall current) can be explained in terms of the Lorentz forces present when charged particles flow in an external magnetic field. However, as established in the very…
In a solid, transport of electricity can occur via electrons or via holes. In the normal state no experiment can determine unambiguously whether the elementary mobile carriers have positive or negative charge. This is no longer true in the…
Fluctuations of conserved quantities within a subsystem are non-local observables that provide unique insights into quantum many-body systems. In this paper, we study bipartite charge (and spin) fluctuations across interaction-driven…
The evolution of the Fermi surface of CeRh$_{1-x}$Co$_x$In$_5$ was studied as a function of Co concentration $x$ via measurements of the de Haas-van Alphen effect. By measuring the angular dependence of quantum oscillation frequencies, we…
The transversal and longitudinal resistance in the quantum Hall effect regime was measured in a Si MOSFET sample in which a slot-gate allows one to vary the electron density and filling factor in different parts of the sample. In case of…
Localization and dephasing of conduction electrons in a low carrier density ferromagnet due to scattering on magnetic fluctuations is considered. We claim the existence of the "mobility edge", which separates the states with fast diffusion…
The universal value of Faraday rotation angle close to the fine structure constant is experimentally observed in thin HgTe quantum wells with thickness on the border between trivial insulating and the topologically non-trivial Dirac phases.…
The "density-density" correlation function of conduction electrons in metal is investigated. It is shown, that the asymptotic behaviour of the CF depends on the shape and the local geometry of the Fermi surface. In particular, the exponent…
Transport properties of high transition temperature (high Tc) cuprate superconductors are investigated within a two-band model. The doping dependent Hall coefficients of La_{2-x}Sr_xCuO_4 (LSCO) and Nd_{2-x}Ce_xCuO_4 (NCCO) are explained by…
Graphene has an unusual low-energy band structure with four chiral bands and half-quantized and quantized Hall effects that have recently attracted theoretical and experimental attention. We study the Fermi energy and disorder dependence of…
We bring resolution to the longstanding problem relating Fermi surface reconstruction to the number of holes contained within the Fermi surface volume in underdoped high Tc superconductors. On considering uniaxial and biaxial charge-density…
A single ferromagnetic kagome layer is predicted to realize a Chern insulator with quantized Hall conductance, which upon stacking can become a Weyl-semimetal with large anomalous Hall effect (AHE) and magneto-optical activity. Indeed, in…
The fractional quantum Hall effect (FQHE) in two-dimensional electron system (2DES) is an exotic, superfluid-like matter with an emergent topological order. From the consideration of Aharonov-Bohm interaction of electrons and magnetic…
The Fermi-liquid-like (FL) resistivity recently observed in clean HgBa2CuO4 below the pseudogap temperature was related to carriers at the nodal points on the Fermi surface [4]. We show that this necessitates important implications for the…
We have measured Hall effect, magnetotransport and magnetostriction on the field induced phases of single crystalline UPt$_2$Si$_2$ in magnetic fields up to 60\,T at temperatures down to 50\,mK. For the magnetic field applied along the $c$…
We find that mesoscopic conductance fluctuations in the quantum Hall regime in silicon MOSFETs display simple and striking patterns. The fluctuations fall into distinct groups which move along lines parallel to loci of integer filling…
A classical analysis suggests that an external magnetic field can cause trajectories of charge carriers on a superconducting domain wall or cosmic string to bend, thus expelling charge carriers with energy above the mass threshold into the…
Strong electron correlations lie at the origin of transformative phenomena such as colossal magneto-resistance and high-temperature superconductivity. Already near room temperature, doped copper oxide materials display remarkable features…