Related papers: Precise characterization of a silicon carbide wave…
The silicon/silicon dioxide (Si/SiO2) interface plays a crucial role in the performance, cost, and reliability of most modern microelectronic devices, from the basic transistor to flash memory, digital cameras, and solar cells. Today the…
Quantum communication promises unprecedented capabilities enabled by the transmission of quantum states of light. However, current implementations face severe distance limitations due to photon loss. Silicon carbide (SiC) defects have…
Silicon carbide is a very promising platform for quantum applications because of extraordinary spin and optical properties of point defects in this technologically-friendly material. These properties are strongly influenced by crystal…
The negatively-charged silicon vacancy center ($\rm V_{Si}^-$) in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing, communication, and computing. Yet, limited information currently available…
Efficient fiber-to-chip couplers for multi-port access to photonic integrated circuits are paramount for a broad class of applications, ranging, e.g., from telecommunication to photonic computing and quantum technologies. While…
In this paper several designs to maximize the absorption efficiency of superconducting-nanowire single-photon detectors are investigated. Using a simple optical cavity consisting of a gold mirror and a SiO2 layer, the absorption efficiency…
A central goal in quantum information science is to efficiently interface photons with single optical modes for quantum networking and distributed quantum computing. Here, we introduce and experimentally demonstrate a compact and efficient…
Efficient on-chip integration of single-photon emitters imposes a major bottleneck for applications of photonic integrated circuits in quantum technologies. Resonantly excited solid-state emitters are emerging as near-optimal quantum light…
We theoretically investigate the interaction of a single quantum dipole with the modes of a fiber-coupled semiconductor waveguide. Through a combination of tight modal confinement and phase-matched evanescent coupling, we predict that…
Wide bandgap semiconductors are widely used in photonic technologies due to their advantageous features, such as large optical bandgap, low losses, and fast operational speeds. Silicon carbide is a prototypical wide bandgap semiconductor…
On-chip optical waveguides with low propagation losses and precisely engineered group velocity dispersion (GVD) are important to nonlinear photonic devices such as soliton microcombs. Yet, despite intensive research efforts, nonlinear…
Electron spins in silicon quantum dots are attractive systems for quantum computing due to their long coherence times and the promise of rapid scaling using semiconductor fabrication techniques. While nearest neighbor exchange coupling of…
We study an integrated silicon photonic chip, composed of several sub-wavelength ridge waveguides, and immersed in a micro-cell with rubidium vapor. Employing two-photon excitation, including a telecom wavelength, we observe that the…
Silicon carbide (SiC) has been widely adopted in the semiconductor industry, particularly in power electronics, because of its high temperature stability, high breakdown field, and fast switching speeds. Its wide band gap makes it an…
Dielectric metasurfaces require high refractive index contrast materials for optimum performance. This requirement imposes a severe restraint; devices have either been demonstrated at wavelengths of 700nm and above using high-index…
We show several techniques for using integrated-photonic waveguide structures to simultaneously characterize multiple waveguide-integrated superconducting-nanowire detectors with a single fiber input. The first set of structures allows…
Direct UV-written waveguides are fabricated in silica-on-silicon with birefringence of $(4.9 \pm 0.2) \times 10^{-4}$, much greater than previously reported in this platform. We show that these waveguides are suitable for the generation of…
We report a single-stage bi-directional interface capable of linking Sr+ trapped ion qubits in a long-distance quantum network. Our interface converts photons between the Sr+ emission wavelength at 422 nm and the telecoms C-band to enable…
Efficient coupling of single quantum emitters to guided optical modes of integrated optical devices is of high importance for applications in quantum information science as well as in the field of sensing. Here we present the design and…
As silicon photonics transitions from research to commercial deployment, packaging solutions that efficiently couple light into highly-compact and functional sub-micron silicon waveguides are imperative but remain challenging. The 220 nm…