Related papers: Emission engineering in monolithically integrated …
Lithium niobate (LN) is a promising material for future complex photonic-electronic circuits, with wide applications in fields like communications, sensing, quantum optics, and computation. LN took a great stride toward compact photonic…
High stress stoichiometric silicon nitride resonators, whose quality factors exceed one million, have shown promise for applications in sensing and signal processing. Yet, electrical integration of the insulating silicon nitride resonators…
In the past few years, we have witnessed an increased interest in the use of 2D materials for the realization of hybrid photonic nonlinear waveguides. Although graphene has attracted most of the attention, other families of 2D materials…
Free-standing silicon nitride (SiN) mechanical resonators are of central interests in applications such as temperature and mass sensing, and for fundamental optomechanical reasearch. Understanding thermal coupling between a membrane…
Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate…
Solid-state quantum emitters coupled to integrated photonic nanostructures are quintessential for exploring fundamental phenomena in cavity quantum electrodynamics and widely employed in photonic quantum technologies such as non-classical…
The performance of modular, networked quantum technologies will be strongly dependent upon the quality of their quantum light-matter interconnects. Solid-state colour centres, and in particular T centres in silicon, offer competitive…
Single-wall carbon nanotube are considered a fascinating nanomaterial for photonic applications and are especially promising for efficient light emitter in the telecommunication wavelength range. Furthermore, their hybrid integration with…
In the last decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost.…
One important building block for future integrated nanophotonic devices is the scalable on-chip interfacing of single photon emitters and quantum memories with single optical modes. Here we present the deterministic integration of a single…
Heterogeneously-integrated electro-optic modulators (EOM) are demonstrated using the hybrid-mode concept, incorporating thin-film lithium niobate (LN) by bonding with silicon nitride (SiN) passive photonics. At wavelengths near 1550 nm,…
4H-silicon carbide is a promising platform for solid-state quantum technology due to its commercial availability as a wide bandgap semiconductor and ability to host numerous spin-active color centers. Integrating color centers into…
Silicon carbide (SiC) is rapidly emerging as a leading platform for the implementation of nonlinear and quantum photonics. Here, we find that commercial SiC, which hosts a variety of spin qubits, possesses low optical absorption that can…
Besides being the foundational material for microelectronics, in optics, crystalline silicon has long been used for making infrared lenses and mirrors. More recently, silicon has become the key material to achieve large-scale integration of…
The recent progress in chip-scale integrated photonics has stimulated the rapid development of material platforms with desired optical properties. Among the different material platforms that are currently investigated, the third-generation…
Metallic nanoparticle-on-a-mirror (NPoM) cavities enable extreme field confinement in sub-nm gaps, leading to unrivaled performance for nonlinear processes such as surface-enhanced Raman scattering (SERS). So far, prevailing experimental…
We report a new approach for monolithic integration of III-V materials into silicon, based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy. Our method includes elements of both selective area and…
We present waveguide integrated high-speed Si photodetector integrated with silicon nitride (SiN) waveguide on SOI platform for short reach data communication in 850 nm wavelength band. We demonstrate a waveguide couple Si pin photodetector…
High precision placement and integration of color centers in a silicon-based nanosystem, such as a nanowire (NW) array, exhibiting high integration functionality and high photoluminescence (PL) yield can serve as a critical building block…
Triangular cross-section SiC photonic devices have been studied as an efficient and scalable route for integration of color centers into quantum hardware. In this work, we explore efficient collection and detection of color center emission…