Related papers: Reducing strain fluctuations in quantum dot device…
Motivated by recent experiments reporting superconductivity only at very low temperature in a class of heavy fermion compounds, we study the impact of energy fluctuations with small momentum transfer on the pairing instability near an…
Spin dependent transport in a ferromagnet/superconductor/ferromagnet single electron transistor is studied theoretically with spin accumulation, spin relaxation, gap suppression, and charging effects taken into account. A strong dependence…
Using an in-house Schroedinger-Poisson (SP) solver, we investigate the creation of a single hole spin qubit inside a triple-gate triangular silicon fin field effect transistor (Si FinFET) quantum device similar to experimental structures.…
In this study, we use first-principles calculations to investigate the stacking-dependent electronic properties of GaSe/GaTe van der Waals heterobilayers. By analyzing five representative stacking configurations--AA, AA$'$, A$'$C, A$'$B,…
Conductance fluctuations have been studied in a soft wall stadium and a Sinai billiard defined by electrostatic gates on a high mobility semiconductor heterojunction. These reproducible magnetoconductance fluctuations are found to be…
Monolayer semiconductors hold great potential for nanoscale electronics, optoelectronics, and photonics. Excitons dominate their optical properties. As their electric fields extend outside the monolayer, they are sensitive to their…
A wide variety of experimental results and theoretical investigations in recent years have convincingly demonstrated that several transition metal oxides and other materials, have dominant states that are not spatially homogeneous. This…
Overcoming the influence of noise and imperfections in quantum devices is one of the main challenges for viable quantum applications. In this article, we present different protocols, which we denote as "superposed quantum error mitigation",…
Metal to insulator transitions (MITs) driven by strong electronic correlations are common in condensed matter systems, and are associated with some of the most remarkable collective phenomena in solids, including superconductivity and…
Regardless of various material design strategies, experimentally achieving substantial and controllable valley splitting in Si/SiGe quantum wells remains a central challenge for ensuring high gate uniformity. This difficulty arises from…
The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for…
Nanomechanical systems have been proposed as an alternative computing platform for high radiation environments, where semiconductor electronics traditionally fail, as well as to allow improved gate densities and energy consumption. While…
Quantum string, which was brought into discussion recently as a model for the stripe phase in doped cuprates, is simulated by means of the density-matrix-renormalization-group method. String collides with adjacent neighbors, as it wonders,…
Our current understanding of strongly correlated electron systems is based on a homogeneous framework. Here we take a step going beyond this paradigm by incorporating inhomogeneity from the beginning. Specifying to systems near the Mott…
By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…
Recently, superconductivity has been observed in twisted WSe$_2$ moir\'{e} structures (Xia et al., Nature 2024; Guo et al., Nature 2025). Its transition temperature is high, reaching a few percent of the Fermi temperature scale. Here, we…
Combining the capabilities of gate defined quantum transport devices in GaAs-based heterostructures and of optically addressed self-assembled quantum dots could open broad perspectives for new devices and functionalities. For example,…
The recently reported gate-tunable superconductivity in monolayer WTe$_2$ [Science 362, 922 (2018); Science 362, 926 (2018); Nat. Phys. 20, 269 (2024); PRR 7, 013224 (2025)] exhibits several striking anomalies beyond the standard paradigm,…
We have developed a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts outside the Hall bar in ultra-high mobility SiGe/Si/SiGe heterostructures. It involves the creation of…
We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance…