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We study coherent backscattering phenomena from single and multiple stacking faults (SFs) in 3C- and 4H-SiC within density functional theory quantum transport calculations. We show that SFs give rise to highly dispersive bands within both…
These compounds have long been known as promising thermoelectric materials. Recently it was revealed, that they also have unconventional electronic topology. This renewed interest to the investigation of their transport properties. In order…
The active harnessing of quantum resources in engineered quantum devices poses unprecedented requirements on device control. Besides the residual interaction with the environment, causing environment-induced decoherence, uncontrolled…
We investigate correlation physics in high-density, two-dimensional electron liquids that reside in narrow SrTiO3 quantum wells. The quantum wells are remotely doped via an interfacial polar discontinuity and the three-dimensional (3D)…
Quantum metric, a probe to spacetime of the Hilbert space, has been found measurable in the nonlinear electronic transport thus has attracted tremendous interest. However, without comparing with mechanisms tied to disorder, it is still…
We study electron transport through a domain wall in a ferromagnetic nanowire subject to spin-dependent scattering. A scattering matrix formalism is developed to address both coherent and incoherent transport properties. The coherent case…
We derive a kinetic theory capable of dealing both with large spin-orbit coupling and Kondo screening in dilute magnetic alloys. We obtain the collision integral non-perturbatively and uncover a contribution proportional to the momentum…
The mechanism of the anomalous Hall transport phenomena, if it is of the intrinsic or extrinsic origin, has been controversial. We present a unified theory of them for ferromagnetic metals with dilute impurities at the zero temperature, in…
Shuttling of single electrons in gate-defined silicon quantum dots is numerically simulated. A minimal gate geometry without explicit tunnel barrier gates is introduced, and used to define a chain of accumulation mode quantum dots, each…
A density functional theory based two-terminal scattering formalism that includes spin-orbit coupling and spin non-collinearity is described. An implementation using tight-binding muffin-tin orbitals combined with extensive use of sparse…
We explore the inelastic electron scattering cross section off a quantum dot close to the Stoner instability. We focus on the regime of strong Coulomb blockade in which the scattering cross section is dominated by the cotunneling processes.…
Strong disorder has a crucial effect on the electronic structure in quantum materials by increasing localization, interactions, and modifying the density of states. Bi$_x$TeI films grown at room temperature and \SI{230}{K} exhibit dramatic…
We introduce a minimal interface-scattering mechanism that produces a sizable anisotropic magnetoresistance (AMR) in metal/ferromagnet bilayers (e.g., Pt/YIG) without invoking bulk spin or orbital Hall currents. In a $\delta$-layer model…
By viewing current in the detecting lead of a spintronic device as being an ensemble of flowing spins corresponding to a mixed quantum state, where each spin itself is generally described by an improper mixture generated during the…
As applied to the numerical simulation of electron transport and scattering processes in semiconductors an efficient model describing the scattering of electrons by the ionized impurities is proposed. On the example of GaAs at 77 and 300 K…
Carrier mobility in bulk semiconductors is typically governed by electron-phonon (e-ph) scattering. In nanostructures, spatial confinement can lead to significant surface scattering, lowering mobility and breaking the spatial homogeneity…
We theoretically consider the carrier density tuned (apparent) two-dimensional (2D) metal-insulator-transition (MIT) in semiconductor heterostructure-based 2D carrier systems as arising from a classical percolation phenomenon in the…
We assess the viability of topological semimetals for application in advanced interconnect technology, where conductor size is on the order of a few nanometers and grain boundaries are expected to be prevalent. We investigate the electron…
Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mobility is desirable for a reduced loss and high-speed…
We analyze the transport properties in approximants of quasicrystals alpha-AlMnSi, 1/1-AlCuFe and for the complex metallic phase lambda-AlMn. These phases presents strong analogies in their local atomic structures and are related to…