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With a large band gap and a single Dirac cone responsible for the topological surface states, Bi2Se3 is widely regarded as a prototypical 3D topological insulator. Further applications of the bulk material has, however, been hindered by…

Materials Science · Physics 2023-06-02 Rodrigo T. Paulino , Marcos A. Avila

Change in the interatomic spacing of a two-atom system under tension and compression has been modelled by the elastic deformation of atoms. The critical elastic strain of atoms before separation or cracking from tension was estimated by the…

Superconductivity · Physics 2024-04-23 Xiaozhi Hu

Designing metal-semiconductor junctions is essential for optimizing the performance of modern nanoelectronic devices. A widely used material is TiSi$_2$, which combines low electronic resistivity with good endurance. However, its multitude…

Materials Science · Physics 2026-01-16 Lukas Hückmann , Jonathon Cottom , Jörg Meyer , Emilia Olsson

The high pressure structural properties of bismuth oxide Bi2SiO5 have been investigated up to 28 GPa using in situ powder synchrotron X-ray diffraction and up to 50 GPa with DFT calculations. The monoclinic structure is found to persist up…

A convenient method has been developed to thin electron beam fabricated Silicon nanopillars under controlled surface manipulation by transforming the surface of the pillars to an oxide shell layer followed by the growth of sacrificial…

Mesoscale and Nanoscale Physics · Physics 2015-12-29 S Kalem , P Werner , B Nilsson , V G Talalaev , M Hagberg , O Arthursson , U Sodervall

Quaternary phases formed in copper alloys are investigated through a combination of quantum-mechanical and classical computer simulations and active machine learning. Focus is given on nickel, silicon, and chromium impurities in a copper…

Materials Science · Physics 2024-10-24 Ángel Díaz Carral , Simon Gravelle , Maria Fyta

Atomically thin semiconductors exhibit tunable exciton resonances that can be harnessed for dynamic manipulation of visible light in ultra-compact metadevices. However, the rapid nonradiative decay and dephasing of excitons at room…

Optics · Physics 2025-02-18 Tom Hoekstra , Jorik van de Groep

Silicon anodes offer high energy densities for next-generation lithium-ion batteries; however, their application is limited by severe volume expansion during cycling. Making silicon porous or nanostructured mitigates this expansion but…

Engineered dissipation provides a powerful route to controlling and stabilizing quantum states in open systems. Superconducting circuits are particularly suited to this approach due to their tunable coupling to dissipative environments.…

Quantum Physics · Physics 2026-05-13 Qihao Guo , Botao Du , Ruichao Ma

Dielectric metasurfaces supporting quasi-bound states in the continuum (quasi-BICs) exhibit very high quality factor resonances and electric field confinement. However, accessing the high-Q end of the quasi-BIC regime usually requires…

We have investigated the response of amorphous silicon (a-Si), in particular crystallization, to external mechanical shear deformations using classical molecular dynamics (MD) simulations and the empirical Environment Dependent Inter-atomic…

Materials Science · Physics 2015-05-28 Ali Kerrache , Normand Mousseau , Laurent J. Lewis

The majority of silicon photonics is built on silicon-on-insulator (SOI) wafers while the majority of electronics, including CPUs and memory, are built on bulk silicon wafers, limiting broader acceptance of silicon photonics. This…

Optics · Physics 2015-06-16 Yoon Ho Daniel Lee , Michael O. Thompson , Michal Lipson

Several amorphous silicon structures were generated using a classical molecular dynamics (MD) protocol of melting and quenching with different quenching rates. An analysis of the calculated electronic properties of these structures revealed…

Materials Science · Physics 2020-12-23 Reza Vatan Meidanshahi , Payam Mehr , Stephan Marshal Goodnick

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but…

Materials Science · Physics 2016-12-13 Dirk König , Daniel Hiller , Sebastian Gutsch , Margit Zacharias , Sean Smith

We present the findings of the superconductivity in the silicon nanostructures prepared by short time diffusion of boron after preliminary oxidation of the n-type Si (100) surface. These Si-based nanostructures represent the p-type high…

Superconductivity · Physics 2015-05-13 N. T. Bagraev , W. Gehlhoff , L. E. Klyachkin , A. M. Malyarenko , V. V. Romanov

While electric and magnetic dipolar resonances in SiC have been studied in the far-infrared, they have not been studied in the near infrared. Here we show for the first time that electromagnetic Mie-scattering moments within SiC…

Recently, significant research efforts have been made to develop complex nanostructures to provide more sophisticated control over the optical and electronic properties of nanomaterials. However, there are only a handful of semiconductors…

Materials Science · Physics 2015-06-12 Andrew P. Magyar , Igor Aharonovich , Mor Baram , Evelyn L. Hu

We present a study on the mechanical configuration and the electronic properties of semiconducting carbon nanotubes supported by partially depassivated silicon substrates, as inferred from topographic and spectroscopic data acquired with a…

Mesoscale and Nanoscale Physics · Physics 2010-01-28 Salvador Barraza-Lopez , Peter M. Albrecht , Joseph W. Lyding

In the present work, we report the synthesis of Pb-Bi alloy with enhanced Tc of up to 9K, which is higher than that of Pb. The alloy is synthesized via a solid-state reaction route in the vacuum-encapsulated quartz tube at 7000C in an…

Superconductivity · Physics 2024-07-02 N. K. Karn , Kapil Kumar , Naveen Kumar , Yogesh Kumar , M. M. Sharma , Jin Hu , V. P. S. Awana

Pressure-induced phase transformation occurs during silicon (Si) wafering processes. \b{eta}-tin (Si-II) phase is formed at high pressures, followed by the transformation to Si-XII, Si-III or/and amorphous Si ({\alpha}-Si) phases during the…