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We demonstrate tunnel magnetoresistance (TMR) junctions based on a tri layer system consisting of an epitaxial NiMnSb, aluminum oxide and CoFe tri layer. The junctions show a tunnelling magnetoresistance of Delta R/R of 8.7% at room…

Materials Science · Physics 2009-11-11 J. Liu , E. Girgis , P. Bach , C. Ruester , C. Gould , G. Schmidt , L. W. Molenkamp

The spin filtering effect, distinct decaying lengths experienced by oppositely spin-polarized electrons in a magnetic barrier, generally occurs in ferromagnetic (FM) insulators or semiconductors. With the rise of altermagnetic (ALM)…

Materials Science · Physics 2025-01-08 Boyuan Chi , Leina Jiang , Yu Zhu , Guoqiang Yu , Caihua Wan , Xiufeng Han

Controlling magnetic properties through the application of an electric field is a significant challenge in modern nanomagnetism. In this study, we investigate the magneto-ionic control of magnetic anisotropy in the topmost Co layer in…

A three-dimensional self-consistent spin transport model is developed, which includes both tunnelling transport, as well as metallic transport. Using the spin accumulation computed either side of a tunnel barrier, spin torques are obtained,…

Mesoscale and Nanoscale Physics · Physics 2023-02-01 Serban Lepadatu , Alexey Dobrynin

Depth-grading of magnetic anisotropy in perpendicular magnetic media has been predicted to reduce the field required to write data without sacrificing thermal stability. To study this prediction, we have produced Co/Pd multilayers with…

Materials Science · Physics 2015-05-14 B. J. Kirby , J. E. Davies , Kai Liu , S. M. Watson , G. T. Zimanyi , R. D. Shull , P. A. Kienzle , J. A. Borchers

We introduce a minimal interface-scattering mechanism that produces a sizable anisotropic magnetoresistance (AMR) in metal/ferromagnet bilayers (e.g., Pt/YIG) without invoking bulk spin or orbital Hall currents. In a $\delta$-layer model…

Mesoscale and Nanoscale Physics · Physics 2025-10-17 Ivan Iorsh , Mikhail Titov

Spintronics-based nonvolatile components in neuromorphic circuits offer the possibility of realizing novel functionalities at low power. Current-controlled electrical switching of magnetization is actively researched in this context.…

Applied Physics · Physics 2023-01-10 A. S. Goossens , M. A. T. Leiviskä , T. Banerjee

The electric magnetochiral anisotropy is a nonreciprocal phenomenon accessible via second harmonic transport in noncentrosymmetric, time-reversal invariant materials, in which the rectification of current, ${\bf I}$, can be controlled by an…

We study the effect of dipolar interactions on a magnetic striped monolayer with a microscopic unit cell of square symmetry, and of size $(N_x\times N_y)$ spins. Even if the aspect ratio $r=N_x/N_y$ is very large, an in-plane shape…

Condensed Matter · Physics 2007-05-23 Paolo Politi , Maria Gloria Pini

Topological spin textures such as magnetic skyrmions hold considerable promise as robust, nanometre-scale, mobile bits for sustainable computing. A longstanding roadblock to unleashing their potential is the absence of a device enabling…

A quantitative mathematical model for the critical thickness of strained epitaxial metal films is presented, at which the magnetic moment experiences a reorientation from in-plane to perpendicular magnetic anisotropy. The model is based on…

Strongly Correlated Electrons · Physics 2011-06-13 Artur Braun

Spin Hall effect (SHE) induced reversal of perpendicular magnetization has attracted significant interest, due to its potential to lead to low power memory and logic devices. However, the switching requires an assisted in-plane magnetic…

Materials Science · Physics 2017-10-11 Zhengyang Zhao , Angeline Klemm Smith , Mahdi Jamali , Jian-Ping Wang

Replacing the ferromagnet with ferrimagnet (FiM) in the magnetic tunnel junction (MTJ) allows faster magnetization switching in picoseconds. The operation of a memory cell that consists of the MTJ and a transistor requires reversable…

Mesoscale and Nanoscale Physics · Physics 2024-11-12 Zhuo Xu , Zhengping Yuan , Xue Zhang , Zhengde Xu , Yixiao Qiao , Yumeng Yang , Zhifeng Zhu

We predict an anomalous bias dependence of the spin transfer torque parallel to interface, $T_{||}$, in magnetic tunnel junctions (MTJ), which can be selectively tuned by the exchange splitting. It may exhibit a sign reversal {\it without}…

Other Condensed Matter · Physics 2007-05-23 Ioannis Theodonis , Nicholas Kioussis , Alan Kalitsov , Mairbek Chshiev , William Butler

We theoretically investigate the effect of transverse magnetic anisotropy on spin-flip assisted tunneling through atomic spin chains. Using a phenomenological approach and first-order perturbation theory, we analytically calculate the…

Mesoscale and Nanoscale Physics · Physics 2017-05-17 J. Hageman , M. Blaauboer

Perpendicular magnetic anisotropy (PMA) is a key property of magnetoresistive random access memory (MRAM). To increase areal density of MRAM it is important to find a way to enhance the PMA. Recently a strong enhancement of the PMA by…

Materials Science · Physics 2023-03-22 Yukie Kitaoka , Hiroshi Imamura

The self assembly of core-corona discs interacting via anisotropic potentials is investigated using Monte Carlo computer simulations. A minimal interaction potential that incorporates anisotropy in a simple way is introduced. It consists in…

Soft Condensed Matter · Physics 2012-01-27 Daniel Salgado-Blanco , Carlos I. Mendoza

Hardware implementations of the Ising model offer promising solutions to large-scale optimization tasks. In the literature, various nanodevices have been shown to emulate the spin dynamics for such Ising machines with remarkable…

Spin-orbit torques, which utilize spin currents arising from the spin-orbit coupling, offer a novel method to electrically switch the magnetization with perpendicular anisotropy. However, the necessity of an external magnetic field to…

Materials Science · Physics 2018-07-18 Jong Min Lee , Kaiming Cai , Guang Yang , Yang Liu , Rajagopalan Ramaswamy , Pan He , Hyunsoo Yang

We investigate the possibility of realizing a spintronic memristive device based on the dependence of the tunnel conductance on the relative angle between the magnetization of the two magnetic electrodes in in-plane magnetized tunnel…